The Measurement of the Thermal Expansion of Single Crystals of Indium and Tin with a Photoelectric Recording Dilatometer

Vernon, E. V.; Weintroub, S.

doi:10.1088/0370-1301/66/10/309

Cited by 21 publications

(6 citation statements)

References 17 publications

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“…In the inset Fig. 5 we have plotted the bulk lattice parameters of silicon and indium as a function oftemperature [33]. We find that with application of temperature there is a gradual reduction in the lattice mismatch which promotes layering of the In islands, due to reduced strain.…”

Section: Methodsmentioning

confidence: 96%

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

et al. 2010

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Using the morphological differences of low and high index surfaces as templates for metal growth, several low dimensional overlayer structures with novel structural and electronic properties can be formed. We present here a first report on submonolayer adsorption and residual thermal desorption studies of In adatoms on reconstructed high index Si (55 12)-2x1 surface and compare it with the observations on planar Si (111) -7 x 7 surface. The study is done by using in-situ Ultra High Vacuum surface sensitive probes like Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). These conventional wide area techniques provide an understanding of atomistic issues involved in the evolution of the interface. We have observed an anomalous growth mode during adsorption at room temperature (RT) above 2ML, which includes adatom layering and clustering on Si (111) surface. This is also manifested during the desorption experiments on both surfaces, and the subtle differences on the two surfaces are discussed. The observation of LEED pattern during the adsorption process shows formation of different superstructural phases on Si (111 )-7 x 7 surface. On Si (5512) 2 x 1 surface we observe the sequential2x (225), 2x (337) and 2x (113) facet formation during adsorption/desorption, which include quasi 1D-nanowire/chain structures. A combination of lattice strain effects, presence of step-edge barrier and quantum size effects are employed to speculate the differences in adsorption and desorption.

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Section: Methodsmentioning

confidence: 96%

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

et al. 2010

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“…A joint containing few Sn orientations will have highly anisotropic properties because Sn has highly directional thermophysical properties [18]. For example, the coefficient of thermal expansion [19], elastic stiffness [20], diffusion coefficient of common solutes [21] and plasticity [17] are all strongly direction dependent in Sn. Furthermore, if the few Sn grains are oriented differently in each joint, then the behaviour of each joint is unique.…”

Section: Introductionmentioning

confidence: 99%

Nucleation and Growth of Tin in Pb-Free Solder Joints

Gourlay

Belyakov

et al. 2015

JOM

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The solidification of Pb-free solder joints is overviewed with a focus on the formation of the Sn grain structure and grain orientations. Three solders commonly used in electronics manufacturing, Sn-3Ag-0.5Cu, Sn-3.5Ag and Sn-0.7Cu-0.05Ni, are used as case studies to demonstrate that growth competition between primary dendrites and eutectic fronts during growth in undercooled melts is important in Pb-free solders, and that a metastable eutectic containing NiSn4 forms in Sn-3.5Ag/Ni joints. Additionally, it is shown that the substrate (metallization) has a strong influence on the nucleation and growth of tin. We identify Co, Pd and Pt substrates as having potential to control solidification and microstructure formation. In the case of Pd and Pt substrates, Sn is shown to nucleate on the PtSn4 or PdSn4 IMC reaction layer at relatively low undercooling of ~4K, even for small solder ball diameters down to <200 m. IntroductionThe transition to Pb-free electronic interconnections has been underway for more than a decade and despite the exemptions to the RoHS Directive there are few applications where Pb-free solders are not being used. At the same time, electronic packaging technologies have been advancing and there is an ongoing need to develop next-generation Pb-free solders and substrates that are better suited to smaller joints that can operate at higher temperature and that are more reliable.The most commonly used Pb-free solders are hypoeutectic or near-eutectic compositions from the Sn-Ag-Cu (SAC), Sn-Ag or Sn-Cu-Ni alloy systems. These compositions solidify with significant differences to the near-eutectic Sn-Pb solders used previously. For example, where the Sn-37Pb

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“…The experimental data relative to the molar volume [59,[72][73][74][75][76][77][78][79][80][81][82], thermal expansion coefficient [79,[83][84][85][86][87][88][89][90][91][92], and bulk modulus [93,75,84,[94][95][96][97][98][99] of β-Sn are reviewed in Table 2. Several clarifications are given as follows regarding the treatment of those data.…”

Section: Assessment Of β-Snmentioning

confidence: 99%

A self-consistent model to describe the temperature dependence of the bulk modulus, thermal expansion and molar volume compatible with 3rd generation CALPHAD databases

Deffrennes¹,

Oudot²

2021

Calphad

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The Measurement of the Thermal Expansion of Single Crystals of Indium and Tin with a Photoelectric Recording Dilatometer

Cited by 21 publications

References 17 publications

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

Nucleation and Growth of Tin in Pb-Free Solder Joints

A self-consistent model to describe the temperature dependence of the bulk modulus, thermal expansion and molar volume compatible with 3rd generation CALPHAD databases

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