The measurement of thermal properties of diamond

Yamamoto, Yoshiyuki; Imai, T.; Tanabe, Keiichiro; Tsuno, Takashi; Kumazawa, Yoshiaki; Fujimori, Naoji

doi:10.1016/s0925-9635(96)00772-8

Cited by 204 publications

(79 citation statements)

References 6 publications

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“…We correct these conductivity values using the simplified formula proposed by Chen 23 : Figure 3 suggests that the choice of substrate conductivity as an additional free parameter is justified as the measured conductivities are close both in trend and magnitude to the one predicted by equation 7. The discrepancies with the values from Hudson et al can be rationalized by three ways: 1) the conductivity of the diamond can vary significantly with its nitrogen content 41 , an effect that is expected to be larger at lower temperatures, explaining the lower values found, 2) we assume a linear dispersion relation and a mean free path that is not dependent on the phonon wavelength which is a crude 22? yet commonly used approximation and 3) the sputter deposition method used in this case may implant Ar atoms in the lattice, also decreasing k substrate .…”

Section: A Substrate Conductivitymentioning

confidence: 79%

Influence of diamond surface termination on thermal boundary conductance between Al and diamond

Monachon

Weber

2013

Journal of Applied Physics

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The effect of diamond surface treatment on the Thermal Boundary Conductance (TBC) between Al and diamond is investigated. The treatments consist in either of the following: exposition to a plasma of pure Ar, Ar:H and Ar:O, and HNO3:H2SO4 acid dip for various times. The surface of diamond after treatment is analyzed by X-ray Photoelectron Spectroscopy, revealing hydrogen termination for the as-received and Ar:H plasma treated samples, pure sp2 termination for Ar treated ones and oxygen (keton-like) termination for the other treatments. At ambient, all the specific treatments improve the TBC between Al and diamond from 23 ± 2 MW m–2 K–1 for the as-received to 65 ± 5, 125 ± 20, 150 ± 20, 180 ± 20 MW m–2 K–1 for the ones treated by Ar:H plasma, acid, pure Ar plasma, and Ar:O plasma with an evaporated Al layer on top, respectively. The effect of these treatments on temperature dependence are also observed and compared with the most common models available in the literature as well as experimental values in the same system. The results obtained show that the values measured for an Ar:O plasma treated diamond with Al sputtered on top stay consistently higher than the values existing in the literature over a temperature range from 78 to 290 K, probably due a lower sample surface roughness. Around ambient, the TBC values measured lay close to or even somewhat above the radiation limit, suggesting that inelastic or electronic processes may influence the transfer of heat at this metal/dielectric interface.

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Section: A Substrate Conductivitymentioning

confidence: 79%

Influence of diamond surface termination on thermal boundary conductance between Al and diamond

Monachon

Weber

2013

Journal of Applied Physics

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“…The intrinsic thermal conductivity for each of the diamond qualities have been derived by replacing the encountered N c in the correlation between N c and thermal conductivity reported by Yamamoto et al [36]. Derived values are collected in Table 3, which also shows a qualitative analysis of their metallic impurities obtained by means of X-ray microfluorescence spectrometry.…”

Section: Tablementioning

confidence: 99%

On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality versus processing conditions

Monje

Louis

Molina

2014

Composites Part A: Applied Science and Manufacturing

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Please cite this article as: Monje, I.E., Louis, E., Molina, J.M., On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality vs processing conditions, Composites: Part A (2014), doi: http://dx.doi.org/10. 1016/j.compositesa.2014.08.015 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. TC is mainly governed by the Al-diamond interface characteristics, which are determined by a proper control exerted through processing conditions. Albeit a very low cost and low quality diamond is used, a high value of 667 W/mK has been measured for Al/diamond composites produced under optimized processing conditions. Values above 740 W/mK are reported for the best diamond quality explored in this work. These experimental results, which assign the control over TC mainly to the interface conductance, suggest that many of the limiting values of TC reported in literature for the different explored metal-diamond systems, need to be reconsidered by proper precise control of interface evolution. ON CRITICAL ASPECTS OF INFILTRATED

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“…(2) and (3), we used the following values of the involved variables: a = 190 lm, V i = 0.64, j m in Table 1 and j i = 1740 W m -1 K -1 . This given value for j i was calculated according to the expression proposed by Yamamoto et al [22] and by using a concentration of 213 ± 13 ppm of nitrogen, measured by combustion analysis for the SDB1125 diamond particles.…”

Section: Methodsmentioning

confidence: 99%

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

et al. 2018

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The existence of interfacial carbides is a well-known phenomenon in Al/diamond composites, although quantitative analyses are not described so far. The control of the formation of interfacial carbides while processing Al(Si)/diamond composites is of vital interest as a degradation of thermophysical properties appears upon excessive formation. Analytical quantification was performed by GC-MS measurements of gaseous species released upon dissolving the matrix and interfacial reaction products in aqueous NaOH solutions and the CH 4 /N 2 ratio of the evolving reaction gases can be used for quantification. Although the formation of interfacial carbides is significantly suppressed by adding Si to Al, also a decline in composite thermal conductivity is observed in particular with increasing contact time between the liquid metal and the diamond particles during gas pressure infiltration. Furthermore, surface termination of diamond particles positively affects composite thermal conductivity as oxygenated diamond surfaces will result in an increase in composite thermal conductivity compared to hydrogenated ones. In order to understand the mechanisms responsible for all impacts on the thermal conductivity and thermal conductance behaviour, the metal/diamond interface was electrochemical etched and characterized by SEM. Selected specimens were also cut by an ultrashort pulsed laser system to characterize interfacial layers at the virgin cross section in the reactive system Al/diamond.

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The measurement of thermal properties of diamond

Cited by 204 publications

References 6 publications

Influence of diamond surface termination on thermal boundary conductance between Al and diamond

Influence of diamond surface termination on thermal boundary conductance between Al and diamond

On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality versus processing conditions

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

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