The mechanical properties of atomic layer deposited alumina for use in micro- and nano-electromechanical systems

Tripp, Marie; Stampfer, Christoph; Miller, David C.; Helbling, T.; Herrmann, Cari F.; Hierold, Christofer; Gall, Ken; George, Steven M.; Bright, Victor M.

doi:10.1016/j.sna.2006.01.029

Cited by 179 publications

(127 citation statements)

References 35 publications

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“…[75][76][77] In addition, the high thermodynamic stability 29 and atomic/mass density 28 of Al 2 O 3 has enabled it to serve as an optical coating material, 30 surface passivation layer in Si solar cells, 16,78 hermetic encapsulation layer for OLED and packaging applications, 34,35 metal 36 and gas 27,31,32 diffusion barrier in microelectronic applications, and as a corrosion and stiction protection layer in NEM devices. 79 The high mechanical properties 42 of Al 2 O 3 have further enabled its use as a wear-resistant coating in NEM devices, 79 bridge or cantilever in nanomechanical resonator devices, 80 or postfabrication frequency tuning layer for resonant devices. 49,81 AlN was similarly an early high-k candidate to replace SiO 2 in CMOS device applications as both a gate dielectric 82,83 and reaction barrier layer for other oxide high-k dielectrics.…”

Section: Ecs Journal Of Solid State Science and Technology 6 (10) N1mentioning

confidence: 99%

“…Film stress.-The high-k dielectric film stress values derived from the pre/post wafer curvature measurements are summarized in Table III 42 However, more comprehensive studies by Ylivaara 64 have shown that the film stress for ALD Al 2 O 3 grown using TMA/H 2 O is constant over a thickness of 25-600 nm and decreases from ∼525 MPa for growth at 100…”

Section: -268mentioning

confidence: 99%

“…[39][40][41] The mechanical properties of high-k dielectrics have also become a key consideration for the implementation of these materials in various nanoelectromechanical (NEM) 42,43 and flexible micro-/nanoelectronic devices. 44,45 For such devices, knowledge of properties such as Young's modulus and film stress are critical for predicting the flexure and resonance frequencies of bridged and cantilevered switches and sensors, [46][47][48][49] stretched transistor device performance, 50,51 buckling failures in nanopatterned structures, 52,53 and macroscale buckling and nanoscale wrinkling effects for stiff high-k films deposited on compliant polymeric substrates.…”

mentioning

confidence: 99%

“…44,45 For such devices, knowledge of properties such as Young's modulus and film stress are critical for predicting the flexure and resonance frequencies of bridged and cantilevered switches and sensors, [46][47][48][49] stretched transistor device performance, 50,51 buckling failures in nanopatterned structures, 52,53 and macroscale buckling and nanoscale wrinkling effects for stiff high-k films deposited on compliant polymeric substrates. 54,55 Unfortunately, only a limited number of studies have reported on the thermal [56][57][58][59] and mechanical 42,[60][61][62][63][64][65][66] properties of ALD highk dielectric materials, and the numerous reviews [2][3][4][5][6][7][8] of high-k dielectrics have focused primarily on the electronic structure and interfacial properties of high-k dielectrics from a CMOS device perspective. To the authors' knowledge, a clear correspondence between thermal/mechanical and electrical/optical properties for ALD high-k dielectrics has yet to be established.…”

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confidence: 99%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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Section: Ecs Journal Of Solid State Science and Technology 6 (10) N1mentioning

confidence: 99%

Section: -268mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Nano electro mechanical systems (NEMS) are considered as promising switching devices for a variety of electronic applications due to the zero leakage current and abrupt switching properties [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Pull-In Voltage Modeling of Graphene Formed Nickel Nano Electro Mechanical Systems (NEMS)

Lim¹,

Lee²,

Choi³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Pull-in voltage model of nano-electromechanical system with graphene is investigated for the device optimization. In the pull in voltage model, thickness of graphene layer is assumed to be uniform in vertical and lateral direction. Finite element analysis simulation has verified the feasibility of the suggested model. From the suggested model, pull-in voltage change with graphene thickness and cantilever length can be estimated. Maximum induced stress and graphene thickness have a reciprocal relationship.

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Resolving Mechanical Properties and Morphology Evolution of Free‐Standing Ferroelectric Hf_0.5Zr_0.5O₂

et al. 2021

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Advances in creating polar structures in atomic‐layered hafnia‐zirconia (HfxZr1−xO2) films not only augurs extensive growth in studying ferroelectric nanoelectronics and neuromorphic devices, but also spurs opportunities for exploring novel integrated nanoelectromechanical systems (NEMS). Design and implementation of HfxZr1−xO2 NEMS transducers necessitates accurate knowledge of elastic and electromechanical properties. Up to now, all experimental approaches for extraction of morphological content, elastic, and electromechanical properties of HfxZr1−xO2 are based on solidly mounted structures, highly stressed films, and electroded architectures. Unlike HfxZr1−xO2 layers embedded in electronics, NEMS transducers require free‐standing structures with highly contrasted mechanical boundaries and stress profiles. Here, a nanoresonator‐based approach for simultaneous extraction of Young's modulus and residual stress in free‐standing ferroelectric Hf0.5Zr0.5O2 films is presented. High quality factor resonance modes of nanomechanical resonators created in predominantly orthorhombic Hf0.5Zr0.5O2 films are measured using nondestructive optical transduction. Further, the evolution of morphology during creation of free‐standing Hf0.5Zr0.5O2 structures is closely mapped using X‐ray diffraction measurements, clearly showing transformation of ferroelectric orthorhombic to nonpolar monoclinic phase upon stress relaxation. The extracted Young's modulus of 320.0 ± 29.4 GPa and residual stress of σ = 577.4 ± 24.1 MPa show the closest match with theoretical calculations for orthorhombic Hf0.5Zr0.5O2.

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The mechanical properties of atomic layer deposited alumina for use in micro- and nano-electromechanical systems

Cited by 179 publications

References 35 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Pull-In Voltage Modeling of Graphene Formed Nickel Nano Electro Mechanical Systems (NEMS)

Resolving Mechanical Properties and Morphology Evolution of Free‐Standing Ferroelectric Hf_0.5Zr_0.5O₂

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The mechanical properties of atomic layer deposited alumina for use in micro- and nano-electromechanical systems

Cited by 179 publications

References 35 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Pull-In Voltage Modeling of Graphene Formed Nickel Nano Electro Mechanical Systems (NEMS)

Resolving Mechanical Properties and Morphology Evolution of Free‐Standing Ferroelectric Hf0.5Zr0.5O2

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Resolving Mechanical Properties and Morphology Evolution of Free‐Standing Ferroelectric Hf_0.5Zr_0.5O₂