“…Figure 1 summarizes the zero-temperature phase diagram versus strain, the order parameter and energy gain being given for the 3×3 distorted state relative to the corresponding fully relaxed √ 3× √ 3 state at the same strain, for both Sn/Ge and Sn/Si. At zero strain, in agreement with experiment and with previous calculations 15,16,21 , Sn/Ge is 1U distorted, with ∆z ∼ 0.34Å, whereas Sn/Si is 0U (undistorted). Positive strain (in-plane expansion) causes Sn/Ge to lose its distortion, through a 1U-0U transition.…”