The Mechanism of Operation of Lateral and Vertical Organic Field Effect Transistors

Ben-Sasson, Ariel J.; Greenman, Michael; Roichman, Yohai; Tessler, Nir

doi:10.1002/ijch.201400040

Cited by 41 publications

(50 citation statements)

References 69 publications

(96 reference statements)

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“…Thus, the property and structure of source electrode is very crucial for achieving superior VOFET performances based on previous researches, [33,36] it is widely accepted that ultrathin and perforated source electrodes suitable for VOFETs. In this case, a continuous source electrode would completely screen the gate field from the active layer, therefore the natural shielding of the source electrode incorporated between insulator layer and organic semiconductor layer should be first overcome to perform the good modulating characteristics of gate field on the transistor.…”

Section: Vofets Based On Different Source Electrodesmentioning

confidence: 99%

“…[50] In addition, the charge carrier injection also has great influence on the transconductance of VOFETs. electrode, [33,42,52,53] dielectric, [54] the excellent electrical performance and low-cost fabrication process for such kind VOFETs will make them be promising elements in organic electronics and integrated circuits. It is expected that by further understanding the working mechanism and optimizing the structures of PE-VOFET in terms of source [41] Copyright 2009, AIP publishing.…”

Section: Nanopatterned Electrode-based Vofets (Pe-vofets)mentioning

confidence: 99%

“…[33,36] 2) OSSCs are one of the best candidates for high performance organic electronic and optoelectronic devices and circuits. 1) The performances of currently reported VOFETs and their functional devices are still relatively low, which are needed further improvements from aspects of developing high performance organic semiconductors, the further optimization of device structures and device fabrication techniques.…”

Section: Outlook and Conclusionmentioning

confidence: 99%

“…Although there are numerous publications regarding planar OFETs and significant advances have been achieved, [22,23] an inherent disadvantage of planar OFETs is their relatively larger conducting channels (usually in micrometers or even much larger scales). [32][33][34][35] The aim of this review is to give a comprehensive summary on these big progress achieved in this field including the development of novel device architectures and potential applications, which is different from previous reviews that focus on operation mechanisms of VOFETs. In this context, vertical organic field-effect transistors (VOFETs) have gained special interests in organic electronics since its first report in 2004.…”

Section: Introductionmentioning

confidence: 99%

“…It is hard to reduce the channel to a small scale due to the limitation from the device geometry and processing technique, which usually results in low current density and low operating speeds and in turn significantly limits their potential applications in many fields. [33,36] This review is organized as following sections. [24] In such device, the source electrode, active layer (organic semiconductor) and drain electrode are vertically stacked together and the transport direction of charge carriers in VOFETs channel is parallel to the direction of electric field generated by the gate and source electrodes (Figure 1b).…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Vertical Organic Field‐Effect Transistors

Liu

Qin

Gao

et al. 2019

Adv Funct Materials

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Field-effect transistors are the fundamental building blocks for electronic circuits and processors. Compared with inorganic transistors, organic field-effect transistors (OFETs), featuring low cost, low weight, and easy fabrication, are attractive for large-area flexible electronic devices. At present, OFETs with planar structures are widely investigated device structures in organic electronics and optoelectronics; however, they face enormous challenges in realizing large current density, fast operation speed, and outstanding mechanical flexibility for advancing their potential commercialized applications. In this context, vertical organic field-effect transistors (VOFETs), composed of vertically stacked source/drain electrodes, could provide an effective approach for solving these questions due to their inherent small channel length and unique working principles. Since the first report of VOFETs in 2004, impressive progress has been witnessed in this field with the improvement of device performance. The aim of this review is to give a systematical summary of VOFETs with a special focus on device structure optimization for improved performance and potential applications demonstrated by VOFETs. An overview of the development of VOFETs along with current challenges and perspectives is also discussed. It is hoped that this review is timely and valuable for the next step in the rapid development of VOFETs and their related research fields.

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Section: Vofets Based On Different Source Electrodesmentioning

confidence: 99%

Section: Nanopatterned Electrode-based Vofets (Pe-vofets)mentioning

confidence: 99%

Section: Outlook and Conclusionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Vertical Organic Field‐Effect Transistors

Liu

Qin

Gao

et al. 2019

Adv Funct Materials

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Organic‐Based Transistors and Sensors

Gumyusenge

Wang

et al. 2018

Flexible and Stretchable Medical Devices

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Assessment of the Factors Influencing Charge‐Carrier Mobility Measurements in Organic Field‐Effect Transistors

Tessler

Brédas

2018

Adv Funct Materials

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Evaluation of the charge mobilities is a critical link in the development of organic semiconductors and the associated devices. One of the most widely used measurements relies on an organic field-effect transistor (OFET) configuration. It is based on a relationship between charge-carrier mobility and current-voltage curves, which happens to often exclude factors that are extrinsic to the organic semiconductor but can in fact significantly affect the measured current. The consequence is that the actual meaning of the mobilities evaluated in this way remains ambiguous. As such, it is unclear how well OFET data represent the actual charge-transport properties of the organic semiconductors. Here, by employing a molecular-scale OFET device model that directly connects microscopic charge transfer to macroscopic current characteristics, the mobilities in an OFET configuration and their relationships to the bulk mobilities are investigated. Specifically, the role of disorder, nature of the semiconductor-dielectric interface, and presence of non-Ohmic contacts are addressed. By explicitly including these factors that are frequently impeding a clear evaluation of the experimental data, the study represents a major step into a robust molecular-scale description of OFET operation.

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The Mechanism of Operation of Lateral and Vertical Organic Field Effect Transistors

Cited by 41 publications

References 69 publications

Vertical Organic Field‐Effect Transistors

Vertical Organic Field‐Effect Transistors

Organic‐Based Transistors and Sensors

Assessment of the Factors Influencing Charge‐Carrier Mobility Measurements in Organic Field‐Effect Transistors

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