2019
DOI: 10.2174/2352094909666181126152106
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The Mechanism of Sulphide Film Growth on Copper in Anaerobic Sulphide Solutions Under Natural Corrosion Conditions

Abstract: Background and Method: The growth mechanism of sulphide films formed on copper in anaerobic 0.1 M NaCl + 5 x 10 -4 M Na2S solution has been investigated under natural corrosion conditions for exposure periods up to 1691 hours using scanning electron microscopy, focused ion beam cross-sectioning, and a Au marker procedure. Results and Conclusions:The film formed by a chemical deposition process via an outward growth mechanism. This process was controlled by cuprous ion transport in the film combined with sulphi… Show more

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Cited by 1 publication
(5 citation statements)
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“…However, in SO 4 2− ‐containing solution, R P values continued to increase. Since our previous study demonstrated that the film growth was proceeding under diffusion control in Cl − ‐containing solutions, [ 14 ] and that film deposition occurred at the Cu 2 S/electrolyte interface, [ 23 ] the dependence of film growth rate on SH − supply is consistent with a porous film which does not act as a significant corrosion barrier as it thickens.…”
Section: Resultsmentioning
confidence: 91%
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“…However, in SO 4 2− ‐containing solution, R P values continued to increase. Since our previous study demonstrated that the film growth was proceeding under diffusion control in Cl − ‐containing solutions, [ 14 ] and that film deposition occurred at the Cu 2 S/electrolyte interface, [ 23 ] the dependence of film growth rate on SH − supply is consistent with a porous film which does not act as a significant corrosion barrier as it thickens.…”
Section: Resultsmentioning
confidence: 91%
“…with R P −1 proportional to the film growth rate (which can be considered as directly proportional to the corrosion rate). The change of the polarisation resistance is plotted as a function of exposure period for both SO previous study demonstrated that the film growth was proceeding under diffusion control in Cl − -containing solutions, [14] and that film deposition occurred at the Cu 2 S/electrolyte interface, [23] the dependence of film growth rate on SH − supply is consistent with a porous film which does not act as a significant corrosion barrier as it thickens.…”
Section: Eis Measurementsmentioning
confidence: 92%
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