The mechanism of the stability improvement of the B<i>γ</i>-CsSnI<sub>3</sub> perovskite doped with fluorine

Zhao, Zhuo; Wu, Junsheng; Fang, Fang; Li, Tong; Zhou, Yanwen; Wang, Jian

doi:10.1088/2053-1591/ab5dd6

Cited by 11 publications

(5 citation statements)

References 45 publications

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“…The presence of F 4 TCNQ in the grain boundaries and voids can be viewed as an in-situ encapsulation of the perovskite grains, providing physical obstruction from the external atmosphere. Additionally, the high electronegativity of fluorine in F 4 TCNQ can strongly interact with neighboring Sn 2+ ions in the perovskite lattice, preventing their oxidation [25]. To achieve air-stable Sn 2+ -based perovskite devices, the use of specifically designed dense organic ligands and the implementation of suitable passivation layers and/or encapsulation techniques are highly crucial [3,26,27].…”

Section: Resultsmentioning

confidence: 99%

Performance enhancement of 2D tin-halide perovskite transistors via molecule-assisted grain boundary passivation and hole doping

Le,

Liu,

Zhu

2024

J. Phys. D: Appl. Phys.

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Tin (Sn2+)-based halide perovskites have garnered considerable interest for potential applications in field-effect transistors, owing to their low-cost solution processing capability and favorable hole transport properties. However, the polycrystalline nature of halide perovskite films necessitates efficient grain boundary passivation for reliable and stable device operation. Additionally, as a p-type semiconductor, controllable hole-doping is desired for modulating electrical properties. In this study, we demonstrate the dual functionality of doping the small molecule tetrafluoro-tetracyanoquinodimethane (F4TCNQ) into (C6H5C2H4NH3)2SnI4 (abbreviated as (PEA)2SnI4) through a cost-effective solution process. This doping introduces F4TCNQ as both a grain boundary passivator and a charge transfer p-dopant, resulting in effective improvements in transistor performance with a 6-fold enhancement in mobility, a substantial reduction in hysteresis, an enhanced current ratio, and improved stabilities.

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Section: Resultsmentioning

confidence: 99%

Performance enhancement of 2D tin-halide perovskite transistors via molecule-assisted grain boundary passivation and hole doping

Le,

Liu,

Zhu

2024

J. Phys. D: Appl. Phys.

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“…[ 125 ] Zhao et al explored the influence of F doping on the crystal and electron structure of B‐γ CsSnI 3 perovskite. [ 126 ] Partially substituting I − by F − increased the tolerance factor of perovskite and strengthened the binding force in perovskite, which resulted in the remarkable enhancement of the phase stability of the perovskite. In addition, F doping enlarged the bandgap of CsSnI 3 perovskite ( Figure a), which is favorable for improving the V oc of CsSnI 3 PSCs.…”

Section: Strategies For Improving the Performance And Stability Of Cs...mentioning

confidence: 99%

Section: Strategies For Improving the Performance And Stability Of Cs...mentioning

confidence: 99%

Inorganic CsSnI₃ Perovskite Solar Cells: The Progress and Future Prospects

Wang

Chang

et al. 2022

Solar RRL

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environmental stability of hybrid PSCs and hamper the practical application of this device. [8,9] The stability of perovskite materials can be largely enhanced by completely replacing the organic components with inorganic cesium ion (Cs þ ). [10][11][12][13][14][15] Therefore, the inorganic cesium lead halide PSCs have been considered as one of the most promising photovoltaic technologies recently. [16,17] Among all inorganic cesium lead halide perovskite materials, CsPbI 3 perovskite has been considered as the best candidate for solar cells application due to its suitable bandgap of 1.73 eV and excellent optoelectronic properties. [18,19] Since firstly reported in 2014, the CsPbI 3 PSCs have achieved great progress in the stability and power conversion efficiency through the additive and composition engineering, interfacial modification, and optimization of fabrication process. [20][21][22][23][24][25][26][27] Nevertheless, the presence of toxic lead in CsPbI 3 PSCs make an insurmountable obstruction on the way towards practical deployment. Therefore, it is quite imperative to completely replace toxic lead in CsPbI 3 perovskite with environmentally benign metal elements without compromising their performance.The superior performance of lead-based perovskite mainly derives from the combined effect of high structure symmetry, the lone-pair 6s 2 electron in lead, spin-orbit coupling, and high electronic dimensionality. [28][29][30][31][32] Therefore, the low-toxic metal ions that have similar ionic size and electronic structure as Pb 2þ have been widely considered as the potential alternatives for Pb 2þ in inorganic CsPbI 3 perovskite, such as Sn 2þ , Ge 2þ , Mn 2þ , Cu 2þ , Bi 3þ , and Sb 3þ . [33][34][35][36][37] After several years' research, a Sn-based inorganic perovskite, CsSnI 3 , has been demonstrated to be the most suitable lead-free inorganic perovskite for PSCs. [38,39] Sn has similar electronic configuration to Pb. So, the crystal and electronic structure of CsSnI 3 perovskite are similar to that of Pb-based counterpart. Especially, inorganic CsSnI 3 perovskite exhibits even superior optoelectronic properties in comparison to inorganic Pb-based perovskite, such as narrower optical bandgap (1.3 eV) that is more favorable for harvesting sun light and higher charge carrier mobility that is favorable to suppress the charge recombination. Therefore, inorganic CsSnI 3 perovskite shows a great promise for developing highperformance lead-free PSCs.In 2012, Chen et al. first presented a CsSnI 3 perovskite-based Schottky solar cell with a structure of indium-tin-oxide

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“…A high carrier mobility of ∼ 10 2 to 10 3 cm 2 V −1 s −1 for Sn‐based perovskites was demonstrated by Stoumpos and coworkers, [ 7,14 ] As candidate materials for PVs, Sn‐based perovskites retain superior optoelectronic properties such as long diffusion lengths. It was reported by Wu and coworkers that melt‐synthesized CsSnI 3 ingots which contained high‐quality single crystals exhibited diffusion lengths reaching 1 µm with bulk carrier lifetimes approaching 6.6 ns and doping concentrations of ∼4.5 × 10 17 cm −3,[ 15,16 ] On the other hand, Sn‐based perovskites are direct‐bandgap semiconductors, viz. the valence band maximum (VBM) and the conduction band minimum (CBM) lie at the same point in reciprocal space, and possess narrower bandgaps compared with their Pb analogues.…”

Section: Chemical Structurementioning

confidence: 99%

ASnX₃—Better than Pb‐based Perovskite

et al. 2020

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Organic‐inorganic halide perovskite solar cells (PSCs) have drawn tremendous attention as their power conversion efficiency (PCE) has soared to 25.2%. Yet the most efficient halide perovskite materials all contain the toxic element lead (Pb). The search for an alternative element is a crucial research direction. Among all candidates, tin (Sn) appears to be the most promising one for its nontoxicity and physical similarity to lead (Pb). Herein, we review and summarize recent advancements in this emerging research area of Sn‐based perovskites. First, we discuss the photophysical dynamics of the Sn‐based perovskites and the relatively high efficiency of corresponding PSCs and other applications. Then, the attention is focused on the fabrication process and methods to improve the performance of Sn‐based photovoltaic devices. Despite the fact that the stabilities of the materials and related devices are far from perfect, the Sn‐based perovskites are still the best candidates with vast potential among all the Pb‐free perovskites for PSC application.

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The mechanism of the stability improvement of the Bγ-CsSnI₃ perovskite doped with fluorine

Cited by 11 publications

References 45 publications

Performance enhancement of 2D tin-halide perovskite transistors via molecule-assisted grain boundary passivation and hole doping

Performance enhancement of 2D tin-halide perovskite transistors via molecule-assisted grain boundary passivation and hole doping

Inorganic CsSnI₃ Perovskite Solar Cells: The Progress and Future Prospects

ASnX₃—Better than Pb‐based Perovskite

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The mechanism of the stability improvement of the Bγ-CsSnI3 perovskite doped with fluorine

Cited by 11 publications

References 45 publications

Performance enhancement of 2D tin-halide perovskite transistors via molecule-assisted grain boundary passivation and hole doping

Performance enhancement of 2D tin-halide perovskite transistors via molecule-assisted grain boundary passivation and hole doping

Inorganic CsSnI3 Perovskite Solar Cells: The Progress and Future Prospects

ASnX3—Better than Pb‐based Perovskite

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Product

Resources

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The mechanism of the stability improvement of the Bγ-CsSnI₃ perovskite doped with fluorine

Inorganic CsSnI₃ Perovskite Solar Cells: The Progress and Future Prospects

ASnX₃—Better than Pb‐based Perovskite