The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si

Zhang, Zhenzhuo; Yang, Jing; Zhao, Degang; Wang, Baibin; Zhang, Yuheng; Liang, Feng; Chen, Ping; Liu, Zongshun; Ben, Yuhao

doi:10.1063/5.0105524

Cited by 5 publications

(1 citation statement)

References 27 publications

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“…It is widely recognized that the interaction between Ga metal and Si can result in a melting back phenomenon, leading to nonuniform growth of epitaxial films, particularly at high temperatures. [ 23,24 ] The uniform and smooth surface morphology observed in this study suggests the absence of the Ga melting back phenomenon.…”

Section: Resultsmentioning

confidence: 64%

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga₂O₃ Films

Guo,

Koga,

Chen

et al. 2024

Physica Rapid Research Ltrs

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Terbium (Tb) doped Ga2O3 films were grown on Si substrates by pulsed laser deposition at a substrate temperature of 500°C.The electroluminescence (EL) peaks detected at 488, 543, 587, and 622 nm from the Tb doped Ga2O3/Si light emitting diodes (LEDs) correspond to the 5D4 ‐ 7F6, 5D4 ‐ 7F5, 5D4 ‐ 7F4, and 5D4 ‐ 7F3 transitions, respectively. The EL intensity initially increases with current up to 70 mA, followed by a decrease at higher currents. Notably, there is no discernible shift in the EL spectra peaks as the operating current varies from 5 to 90 mA. These findings imply that the Tb doped Ga2O3/Si LED, characterized by its remarkable wavelength stability, holds significant potential for advancing the development of highly efficient LEDs across diverse applications.This article is protected by copyright. All rights reserved.

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Section: Resultsmentioning

confidence: 64%

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga₂O₃ Films

Guo,

Koga,

Chen

et al. 2024

Physica Rapid Research Ltrs

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Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping

Faber,

Römer,

Witzigmann

2024

Physica Status Solidi (a)

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Aluminum nitride (AlN) possesses a high critical electric field, allowing for thinner drift regions and lower resistances compared with current materials used for power semiconductor devices. However, high activation energies of impurity dopants like magnesium or silicon and high contact resistances impede the application of AlN for typical device concepts such as TrenchFET. This article aims to develop and investigate novel vertical device structures using an AlN drift region. To evade the aforementioned issues, polarization‐induced doping is applied to generate an effective charge concentration and to accomplish less resistive ohmic contacts.

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Tracking Charge Carrier Paths in Freestanding GaN/AlN Nanowires on Si(111)

Koch,

Häuser,

Kleinschmidt

et al. 2024

ACS Appl. Mater. Interfaces

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Functional and abundant substrate materials are relevant for applying all sophisticated semiconductor-based device components such as nanowire arrays. In the case of GaN nanowires grown by metalorganic vapor phase epitaxy, Si(111) substrates are widely used, together with an AlN interlayer to suppress the well-known Ga-based melt-back-etching. However, the AlN interlayer can degrade the interfacial conductivity of the Si(111) substrate. To reveal the possible impact of this interlayer on the overall electrical performance, an advanced analysis of the electrical behavior with suitable spatial resolution is essential. For the electrical investigation of the nanowire-to-substrate junction, we used a four-point probe measurement setup with sufficiently high spatial resolution. The charge separation behavior of the junction is also demonstrated by an electron beam-induced current mode, while the n-GaN nanowire (NW) core exhibits good electrical conductivity. The charge carrier-selective transport at the NW-to-substrate junction can be attributed to different, local material compositions by two main effects: the reduction of Ga adatoms by shadowing of the lower part of the NW structure by the top part during growth, i.e. the protection of the pedestal footprint from Ga adsorption. Our combination of investigation methods provides direct insight into the nanowire-to-substrate junction and leads to a model of the conductivity channels at the nanowire base. This knowledge is crucial for all future GaN bottom-up grown nanowire structure devices on conductive Si(111) substrates.

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The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si

Cited by 5 publications

References 27 publications

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga₂O₃ Films

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga₂O₃ Films

Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping

Tracking Charge Carrier Paths in Freestanding GaN/AlN Nanowires on Si(111)

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The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si

Cited by 5 publications

References 27 publications

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga2O3 Films

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga2O3 Films

Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping

Tracking Charge Carrier Paths in Freestanding GaN/AlN Nanowires on Si(111)

Contact Info

Product

Resources

About

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga₂O₃ Films

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga₂O₃ Films