“…Following sputter deposition of a TiO 2 thin film, a gas aggregation source (GAS, as shown schematically in Figure a) , was used to decorate the deposited film with Al NPs. In addition to argon (Ar), we introduced an extremely low amount of oxygen (O 2 ) during sputtering to promote Al cluster nucleation by binding O 2 to sputtered Al atoms. − It is known that Al–O binding is quite stable in comparison to the low dimer binding energy of Al–Al . While at 0.001–0.400 SCCM O 2 flow range we were able to produce Al clusters (confirmed by both, in situ quartz crystal microbalance monitoring (Figure S1) and scanning electron microscopy (SEM) analysis (Figures b and S2 and S3)), at higher O 2 flow rates (>0.400 SCCM), we did not observe any cluster formation (Figure b), which might be attributed to target poisoning (oxidation).…”