The Meyer–Neldel rule and hopping conduction

Dalvi, Anshuman; Reddy, N. Parvathala; Agarwal, S. C.

doi:10.1016/j.ssc.2012.01.018

Cited by 25 publications

(15 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Similar expressions have been observed not only in conductivity but also in many other thermally activated phenomena. The MN rule is also found in literature as the compensation law and has been observed in crystalline, amorphous, organic and inorganic materials [3] [4], but a physical interpretation of E M and σ oo is still not clear enough. (1)…”

Section: Introductionmentioning

confidence: 89%

Meyer-Neldel Rule in Plasma Polythiophene Thin Films

Palacios¹,

Olayo²,

Cruz³

et al. 2014

OJPChem

View full text Add to dashboard Cite

In polymers, the electronic activation energy depends on the fragmentation, crosslinking, dopants, moisture and in general on the structure-environment interaction. This has a special importance in plasma polymers because fragmentation and crosslinking are usually higher than in other polymers. In this work, DC electrical conductivity of polythiophene thin films prepared by plasma (pPTh) was studied using the Meyer-Neldel (MN) rule to calculate the characteristic MN energy and temperature as a function of moisture and metallic dopants. The experimental data for pPTh synthesized in different conditions indicated that EM = 32 meV and T M = 373 K, suggesting a thermally activated conduction mechanism; however, in polymer-metal matrices with metal concentration higher than the percolation threshold, the conduction mechanism is different causing that the MN rule was only partially fulfilled. The congruence of the experimental data with the multiexcitation entropy model is discussed.

show abstract

Section: Introductionmentioning

confidence: 89%

Meyer-Neldel Rule in Plasma Polythiophene Thin Films

Palacios¹,

Olayo²,

Cruz³

et al. 2014

OJPChem

View full text Add to dashboard Cite

show abstract

“…The MN rule can be applied for various activated hopping systems including electron/hole conduction of semiconductors, ionic conduction as well as thermally activated hopping and so on [40].…”

Section: Stress Distribution and Resistancementioning

confidence: 99%

“…According to the NM rule, a linear relationship can be seen between the activation energy and log 0, and various materials obey the NM rule [40]. The relationship between the log0 and ΔE for YSZ measured at various temperatures and compositions (varied the amount of Y2O3)…”

Section: Stress Distribution and Resistancementioning

confidence: 99%

Indentation-induced stress distribution and pressure effect on the resistivity of YSZ

et al. 2016

View full text Add to dashboard Cite

“…Se ha reportado que para la región de bajas temperaturas, bien abajo de la temperatura ambiente (T < 300 K), la conductividad a oscuras no exhibe una dependencia térmicamente activada con la temperatura (Arredondo et al 2010, Huang et al 2013, la cual es un caso común para la región de altas temperaturas. Uno de los procesos que puede ser considerado para el transporte de portadores en esta región, es el de tunelamiento desde los estados ocupados a los estados desocupados involucrando uno o más fotones; este proceso es denominado "hopping" (Dalvi et al 2012, Eginligil et al 2012.…”

Section: Procesos Hopping a Través Del Modelo Difusional En Materialeunclassified

Procesos hopping a través del modelo difusional en materiales nanocristalinos usados para aplicaciones fotovoltaicas

Dussán

Mesa²

2014

Univ. Sci.

View full text Add to dashboard Cite

Here, we present variable range hopping (VRH) models, nearest neighbor hopping (NNH) and potential barriers present at the grain boundaries, as well as mechanisms of electrical transport predominant in semiconductor materials for photovoltaic applications. We performed dark conductivity measures according to temperature for low temperature regions between 120 and 400 K in Si and Cu 3 BiS 2 and Cu 2 ZnSnSe 4 compounds. Using the percolation theory, we obtained hopping parameters and the density of states near the Fermi, N(E F) level for all samples. Using the approach by Mott for VRH, we obtained the diffusion model, which established the relationship between conductivity and density of defect states or localized gap states of the material. The comparative analysis between models evidenced that it is possible to obtain improvement of an order of magnitude in the values of each of the hopping parameters that characterize the material.

show abstract

The Meyer–Neldel rule and hopping conduction

Cited by 25 publications

References 35 publications

Meyer-Neldel Rule in Plasma Polythiophene Thin Films

Meyer-Neldel Rule in Plasma Polythiophene Thin Films

Indentation-induced stress distribution and pressure effect on the resistivity of YSZ

Procesos hopping a través del modelo difusional en materiales nanocristalinos usados para aplicaciones fotovoltaicas

Contact Info

Product

Resources

About