2013
DOI: 10.1109/tasc.2012.2233856
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The Microstructure and Superconducting Properties of Bi,Pb-2223 Thin Film Fabricated by RF Sputtering and Annealing Method

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Cited by 5 publications
(6 citation statements)
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“…Furthermore, J c is calculated to be almost independent of the field when the magnetic field is applied parallel to the ab-plane. [28], DI-BSCCO [1], and MOCVD film [2] for comparison.…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, J c is calculated to be almost independent of the field when the magnetic field is applied parallel to the ab-plane. [28], DI-BSCCO [1], and MOCVD film [2] for comparison.…”
Section: Resultsmentioning
confidence: 99%
“…6; further, the grain connectivity was also low even if only a single Bi-2223 phase was formed. In comparison, temperatures in excess of 850 • C resulted in the J c exceeding 1.0 × 10 5 A/cm 2 , reaching a maximum of 3.3 × 10 5 A/cm 2 at 858 • C. Although these values are still low when compared with those obtained by Endo et al, they are nevertheless sufficiently high for a first trial of Bi,Pb-2223 thin films [28]. Furthermore, these values are much higher than those of tape conductors, despite the similarity in surface morphology identified in the SEM analysis.…”
Section: Resultsmentioning
confidence: 53%
“…Previous reports have demonstrated that Bi,Pb-2223 thin films with a T c = 101 K and J c = 1.0 × 10 4 at 78 K in a magnetic field of 2 T are possible and that these J c values are almost equal to those of tape conductors. Other studies of Bi-2223 thin films have reported J c values of over 2.0 × 10 5 A/cm 2 at 77 K, which are in fact much higher than those obtained with tape conductors [28]. The fabrication of Bi,Pb-2223 thin films with very high J c (∼10 6 A/cm 2 at 77 K in a self-field) and zero-resistance T c (typically around 100 K) has also 00been achieved through a refined three-step (deposition + annealing + post-annealing) process [29].…”
Section: Introductionmentioning
confidence: 70%
“…Although the J c of the optimal sample in this study was similar to that of the Bi-2223 filament in commercial tapes [9], more research work is needed to improve the thin film performance, because the J c of 0.06 MA cm −2 (77 K, selffield) was much lower than that of (Bi, Pb)-2223 thin films fabricated via vacuum methods such as CVD [19] and sputtering [21,22]. As suggested in figures 1-5, there is still a lot of room to improve the surface quality, microstructure, and phase fraction of the thin films obtained via CSD.…”
Section: Discussionmentioning
confidence: 87%
“…Bi-2223 thin films on SrTiO 3 substrates were fabricated by using the PLD method in the study of Mua et al and a J c of 6.2 MA cm −2 (20 K, 0.5 T) was achieved [20]. Matsumoto et al utilized sputtering and post-annealing processes to fabricate Bi-2223 thin films on SrTiO 3 substrates, and the maximum J c was 0.09 MA cm −2 (77 K, self-field) [21,22]. The fabrication of Bi-2223 thin films by using the CSD method, which has a low-cost advantage relative to the above vacuum methods, is rarely found in the literature.…”
Section: Introductionmentioning
confidence: 99%