The microstructure, optical and electrical property of CdZnTe thick films grown from a CSS method

Zhang, Yuelu; Wang, Linjun; Xu, Run; Huang, Jian; Meng, Hao; Tao, Jun; Zhang, Jijun; Min, Jiahua; Shen, Yue

doi:10.1016/j.jcrysgro.2015.08.024

Cited by 26 publications

(5 citation statements)

References 14 publications

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“…The Zn contents and the band gaps of CZT:In films can be calculated through XRD results according to Vigard’s law (eq ) and Foga’s formula (eq ). Among them, a CdTe = 6.481 Å, a ZnTe = 6.103 Å, E gCdTe = 1.5 eV, E gZnTe = 2.25 eV, and b = 0.266 eV. , …”

Section: Resultsmentioning

confidence: 99%

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Close-Spaced Sublimation of CdZnTe:In Films for Solar Energy Water Splitting

et al. 2021

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CdZnTe:In (CZT:In) films were deposited on fluorine-doped tin oxide-coated (FTO) substrates by close-spaced sublimation method, and the structural, morphological, and optical properties of CZT:In films with different thicknesses were studied in detail. Working as a photoanode, the photoelectrochemical (PEC) properties of CZT:In films were investigated, which indicated that the photocurrents of CZT:In films were first increased and then decreased with the increase of film thicknesses under the same bias voltage. Annealing process improved the stability of the CZT:In photoanode. The fabrication of FTO/CZT:In/Pt and FTO/CZT:In/TiO2/Pt photoelectrodes enhanced the PEC properties of CZT:In films and achieved photocurrents of up to 4.2 and 8.2 mA/cm2, respectively.

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Section: Resultsmentioning

confidence: 99%

“…Among them, a CdTe = 6.481 Å, a ZnTe = 6.103 Å, E gCdTe = 1.5 eV, E gZnTe = 2.25 eV, and b = 0.266 eV. 25,26 The calculated structural parameters are shown in Table 1. It can be seen that the lattice constants calculated by XRD are very close to the theoretically calculated lattice constants.…”

Section: Methodsmentioning

confidence: 99%

Close-Spaced Sublimation of CdZnTe:In Films for Solar Energy Water Splitting

et al. 2021

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“…poly-CdZnTe deposition rate of 25 nm/s in ref. 24 ). Furthermore, folded devices profit from much smaller required applied voltages U = Fd decreasing the risk for the read out electronics.…”

Section: Resultsmentioning

confidence: 99%

“…A lot of attention has been paid to improve the properties of poly-CdZnTe. However, the most promising results are based on close-space sublimation deposition that utilizes high temperatures 24 – 26 . Such high temperatures are challenging especially for the direct implementation of the read out electronics.…”

Section: Introductionmentioning

confidence: 99%

Simulation and design of folded perovskite x-ray detectors

Mescher

Hamann

Lemmer

2019

Sci Rep

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A variety of medical, industrial, and scientific applications requires highly sensitive and cost-effective x-ray detectors for photon energies ranging from keV to MeV. Adapting the thickness of polycrystalline or single crystal conversion layers especially to high-energy applications increases the complexity of fabrication and potentially decreases the performance of conventional direct conversion x-ray detectors. To tackle the challenges with respect to the active layer thickness and to combine the superior performance of single crystal materials with the low-cost nature of polycrystalline conversion layers, we investigate thin film x-ray detector technologies based on a folded device architecture. Analytical models simulating the sensitivity and the detective quantum efficiency (DQE) are used to evaluate the performance of folded detectors based on polycrystalline organic-inorganic perovskite semiconductors in various layout configurations and for different photon energies. Simulations of folded perovskite devices show high sensitivities. The DQE analysis introduces additional noise related boundary conditions for the folding length. A comparison with conventional detectors based on state of the art conversion materials at different photon energies demonstrates the potential of the folded detector layout as simulated sensitivities are comparable to single crystal detectors.

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“…Figure 8 is I-V curves of CdZnTe films based on parallel electrodes between −10 V to 10 V, and then fits the ohmic coefficient B with formula I = AV B [32], where A is the constant. the degree of B approaching 1 determines the ohmic contact between electrode and films [33]. The B values of M-0, M-2, M-5, M-10 samples are 0.853, 0.963, 1.035, 0.921, respectively.…”

Section: Gan/znte/cdznte Multilayer Filmsmentioning

confidence: 99%

Effect of ZnTe transition layer to the performance of CdZnTe/GaN multilayer films for solar-blind photodetector applications

Sun¹,

Shen²,

Chen³

et al. 2020

J. Phys. D: Appl. Phys.

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High quality CdZnTe films were prepared on GaN substrates by a close-spaced sublimation method and ZnTe transition layers were introduced to decrease the lattice mismatch between substrates and CdZnTe films for the first time. The morphology and structure of multilayer films were measured by x-ray diffraction and scanning electron microscopy. The crystalline quality of CdZnTe films based on ZnTe transition layers is obviously optimized and the best full width at half maximum and grain size of CdZnTe films are 0.149 • and 10.4 µm, respectively. A surface defect analysis of multilayer films was studied by x-ray photoelectron spectroscopy and low temperature photoluminescence, which indicated that the introduction of ZnTe transition layer can reduce the Cd vacancy ratio of CdZnTe films from 22.9% to 13.3%. It is also found that the electrical properties of GaN/ZnTe/CdZnTe multilayer films show a similar PN junction effect and the best photo-dark current ratio reaches 38.8. The responsivity of multilayer films under 254 nm light is about 69.1 times more than that to 400 nm, which improves the detection of CdZnTe films in the solar-blind region effectively.

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The microstructure, optical and electrical property of CdZnTe thick films grown from a CSS method

Cited by 26 publications

References 14 publications

Close-Spaced Sublimation of CdZnTe:In Films for Solar Energy Water Splitting

Close-Spaced Sublimation of CdZnTe:In Films for Solar Energy Water Splitting

Simulation and design of folded perovskite x-ray detectors

Effect of ZnTe transition layer to the performance of CdZnTe/GaN multilayer films for solar-blind photodetector applications

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