The Mn-N (Manganese-Nitrogen) system

Gokcen, N. A.

doi:10.1007/bf02841582

Cited by 67 publications

(80 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Such a small energy difference also indicates the possibility of co-existence of the two phases at elevated temperature, considering that only the Mn 4 N phase with presumed I-type structure has been prepared experimentally. 97,98 3.2c. M ¼ Fe, Co and Ni.…”

mentioning

confidence: 99%

Predicted stability, structures, and magnetism of 3d transition metal nitrides: the M4N phases

Fang

Koster

et al. 2014

RSC Adv.

View full text Add to dashboard Cite

mentioning

confidence: 99%

Predicted stability, structures, and magnetism of 3d transition metal nitrides: the M4N phases

Fang

Koster

et al. 2014

RSC Adv.

View full text Add to dashboard Cite

“…It is worth noting that all products consisted exclusively of one manganese nitride, i.e., tetragonal g-Mn 3 N 2 . In this regard, the phase diagram and other literature data [3,13] suggest h-MnN to be stable at temperatures below 480°C. Above that temperature and under vacuum, it decomposes to g-Mn 3 N 2 which, under such conditions, shows an apparent stability up to ca.…”

Section: Resultsmentioning

confidence: 85%

“…In this regard, the synthesis has predominantly been accomplished by nitridation of manganese metal in flowing ammonia NH 3 or nitrogen gas N 2 . In this way, for instance, the microcrystalline MnN polytype was synthesized [13]. Reactions of nitrogen or ammonia with Mn-amalgams yielded the g and h manganese nitride phases with no reference to their crystallinity [16].…”

Section: Introductionmentioning

confidence: 99%

Convenient synthesis of nanocrystalline powders of phase-pure manganese nitride η-Mn3N2

et al. 2016

View full text Add to dashboard Cite

Manganese bis(trimethylsilyl)amide Mn[N(Si(CH 3 ) 3 ) 2 ] 2 was used as a convenient material precursor to prepare pure manganese nitride nanopowders with reaction-controlled average crystallite sizes. The precursor was first reacted with liquid ammonia under reflux conditions and the resulting by-product was pyrolyzed under an ammonia flow at temperatures in the range 150-900°C. The powder products were characterized mainly by powder X-ray diffraction (XRD) diffraction, SEM/EDX examinations, and FT-IR and micro-Raman spectroscopies. In all cases, a pure phase of nanocrystalline g-Mn 3 N 2 was detected by XRD as the exclusive manganese nitride product. The compound's nanopowders were extremely reactive toward air. Upon oxidation, they formed either MnO for a relatively better crystallized nitride from higher synthesis temperatures or Mn 3 O 4 after self-ignition of a poorly crystalline nitride from a lower synthesis temperature.

show abstract

“…In the present article, we report on an exchange bias system that is based on antiferromagnetic MnN. It crystallizes in the θ-phase of the Mn-N phase diagram, 20 which crystallizes in the tetragonal variant of the NaCl structure with a = 4.256Å and c = 4.189Å at room temperature where the precise numbers depend on the N content in the material. With increasing nitrogen content, larger lattice constants are observed.…”

Section: -17mentioning

confidence: 99%

“…20 The magnetic order of the material was investigated with neutron powder diffraction and by firstprinciples calculations. [23][24][25] It was found to be collinear of AFM-I type, i.e., with the magnetic moments coupled parallel within the ab planes and alternating along the c direction.…”

Section: -17mentioning

confidence: 99%

Giant perpendicular exchange bias with antiferromagnetic MnN

Zilske

Graulich

Dunz

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta / MnN / CoFeB / MgO / Ta were grown on SiO x by (reactive) magnetron sputtering and studied by x-ray diffraction and Kerr magnetometry. Nontrivial modifications of the exchange bias and the perpendicular magnetic anisotropy were observed both as functions of film thicknesses as well as field cooling temperatures. In optimized film stacks, a giant perpendicular exchange bias of 3600 Oe and a coercive field of 350 Oe were observed at room temperature. The effective interfacial exchange energy is estimated to be J eff = 0.24 mJ/m 2 and the effective uniaxial anisotropy constant of the antiferromagnet is K eff = 24 kJ/m 3 . The maximum effective perpendicular anisotropy field of the CoFeB layer is H ani = 3400 Oe. These values are larger than any previously reported values. These results possibly open a route to magnetically stable, exchange biased perpendicularly magnetized spin valves.Spin electronics allows to realize nonvolatile fast lowpower computer memory and is well established in hard disk drive read heads and magnetic sensors.1,2 The key component in spin electronic devices, a magnetoresistive element using either giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR), is composed of two magnetic films: a free sense layer and a fixed reference layer. The magnetization of the ferromagnetic free layer follows external magnetic fields or can be switched by a current via the spin transfer torque. The reference layer has to be stable against external fields to allow for different magnetic alignments of the two layers, which give rise to the magnetoresistance. The reference layer is typically created by pinning a thin ferromagnetic (FM) film to an antiferromagnetic (AFM) film via the exchange bias (EB) effect.3-9 In a typical device, the magnetic hysteresis loop of the reference layer is shifted by the exchange bias to fields that are not encountered during normal device operation.Thin films with perpendicular magnetic anisotropy (PMA) are of great interest for spintronic devices. The tunable anisotropy energy allows to enhance the thermal stability of the magnetization and lower critical current densities for the spin-transfer torque switching are achievable as compared to in-plane magnetized systems.10-12 Thus, interest in systems showing perpendicular EB (PEB) increased as well. There are several studies about (Co/Pt) n and (Co/Pd) n multilayer systems coupled with an AFM such as IrMn or FeMn. 13-17However, the reported perpendicular exchange bias field values H eb are similar to the coercive field H c , making these systems not attractive for practical applications that require H eb H c . Chen et al. In the present article, we report on an exchange bias system that is based on antiferromagnetic MnN. It crystallizes in the θ-phase of the Mn-N phase diagram, 20 which crystallizes in the tetragonal variant of the NaCl structure with a = 4.256Å and c = 4.189Å ...

show abstract

The Mn-N (Manganese-Nitrogen) system

Cited by 67 publications

References 26 publications

Predicted stability, structures, and magnetism of 3d transition metal nitrides: the M4N phases

Predicted stability, structures, and magnetism of 3d transition metal nitrides: the M4N phases

Convenient synthesis of nanocrystalline powders of phase-pure manganese nitride η-Mn3N2

Giant perpendicular exchange bias with antiferromagnetic MnN

Contact Info

Product

Resources

About