Abstract. Presently, cerium-doped LaMnO 3 is vividly discussed as an electron-doped counterpart prototype to the wellestablished hole-doped mixed-valence manganites. Here, La 0.7 Ce 0.3 MnO 3 thin films of different thicknesses, degrees of CeO 2 phase segregation, and oxygen deficiency, grown on SrTiO 3 single crystal substrates, are compared with respect to their resistancevs.-temperature (R vs. T) behavior from 300 K down to 90 K. While the variation of the film thickness (and thus the degree of epitaxial strain) in the range between 10 nm and 100 nm has only a weak impact on the electrical transport, the degree of oxygen deficiency as well as the existence of CeO 2 clusters can completely change the type of hopping mechanism. This is shown by fitting the respective R-T curves with three different transport models (adiabatic polaron hopping, Mott variable-range hopping, Efros-Shklovskii variable-range hopping), which are commonly used for the mixed-valence manganites. Several characteristic transport parameters, such as the hopping energies, the carrier localization lengths, as well as the Mn valences are derived from the fitting procedures.