The modelling of silicon oxidation from 1 × 10−5 to 20 atmospheres

Reisman, Arnold; Nicollian, Ze. H.; Williams, C. C.; Merz, C. J.

doi:10.1007/bf02667790

Cited by 63 publications

(32 citation statements)

References 12 publications

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“…17,32,33 Nevertheless, the NC population is found the same in the experimental error bars ͑in average size and aerial density͒ when oxidizing under 1.5% of O 2 and 100% O 2 ͑see Fig. 7͒.…”

Section: ͑4͒mentioning

confidence: 79%

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Coffin

Bonafos

Schamm

et al. 2006

Journal of Applied Physics

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Articles you may be interested inModeling stress retarded self-limiting oxidation of suspended silicon nanowires for the development of silicon nanowire-based nanodevices Journal of Applied Physics 110, 033524 (2011) The effect of thermal treatments in nitrogen-diluted oxygen on the structural characteristics of two-dimensional arrays of Si nanocrystals ͑NCs͒ fabricated by ultralow-energy ion implantation ͑1 keV͒ in thin silicon dioxide layers is reported. The NC characteristics ͑size, density, and coverage͒ have been measured by spatially resolved electron-energy-loss spectroscopy by using the spectrum-imaging mode of a scanning transmission electron microscope. Their evolution has been studied as a function of thermal treatment duration at a temperature ͑900°C͒ below the SiO 2 viscoelastic point. An extended spherical Deal-Grove ͓J. Appl. Phys. 36, 3770 ͑1965͔͒ model for self-limiting oxidation of embedded silicon NCs has been carried out. It proposes that the stress effects, due to oxide deformation, slow down the NC oxidation rate and lead to a self-limiting oxide growth. The model predictions show a good agreement with the experimental results. Soft oxidation appears to be a powerful way for manipulating the NC size distribution and surface density.

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Section: ͑4͒mentioning

confidence: 79%

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Coffin

Bonafos

Schamm

et al. 2006

Journal of Applied Physics

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“…The two different growth rates suggest that multiple physical/chemical phenomena are involved in the oxidation process. Assuming an Arrhenius temperature dependence for the different oxide growth regions, 21 Arrhenius plots are shown in Fig. 4; the corresponding activation energies are presented in Table I.…”

Section: Resultsmentioning

confidence: 99%

Rapid thermal oxidation of silicon in ozone

Cui

Madsen

Takoudis

2000

Journal of Applied Physics

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Rapid thermal oxidation (RTO) of Si in ozone gas is studied at temperatures between 200 and 550 °C, and the properties of the resulting ultrathin oxides are characterized using in situ mirror-enhanced reflection Fourier transform infrared (IR) spectroscopy. Thus, the frequency and intensity of the longitudinal optical vibrational mode of the Si–O–Si asymmetric stretching from ultrathin oxide films (<30 Å) are probed in different processing environments and related to the oxidation kinetics and interfacial layer properties. The oxidation rate in ozone is found to be comparable to the one in pure oxygen at approximately 200 °C higher temperature. Analyses of the oxidation in ozone show a fast oxidation regime followed by a slow one with activation energies of 0.13±0.01 and 0.19±0.04 eV, respectively. Two regions are also observed for the oxidation in pure O2 with activation energies of 0.20±0.03 eV for the fast oxidation regime and 0.36±0.04 eV for the slow one. X-ray photoelectron spectroscopy results and IR spectral feature frequency shifts suggest that the RTO of silicon in ozone ambient results in a thinner, less-stressed interfacial layer than the one obtained in pure O2. Preliminary electrical characterization using surface charge analyses indicates that the oxides formed in ozone are of superior quality.

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“…5 A number of studies were therefore carried out to bridge this gap, [6][7][8] resulting in modified kinetic models for this thin regime ͑2-30 nm͒. 5,[9][10][11] However, research in the ultrathin regime (Ͻ2 nm) has not yet reached the same level of maturity, due to the difficulty in acquiring an unambiguous thickness measurement of ultrathin oxide layers. This paper addresses the kinetics and mechanisms of Si oxidation in the ultrathin regime.…”

Section: Introductionmentioning

confidence: 99%

Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method

Yasuda

Kumagai²,

Nishizawa

et al. 2003

Phys. Rev. B

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Dry oxidation kinetics of the Si͑001͒ surface has been investigated using reflectance difference oscillation to resolve atomic-scale phenomena. The activation energy for oxidation has been found to increase as the oxide-Si interface moves in the depth direction, reaching the value for bulk oxidation, 2.0 eV, at the third layer from the surface. The nonlinear dependence of the oxidation rate on the O 2 pressure, which was reported for bulk oxidation, has also been observed in the second-and third-layer oxidation. Chemical reaction and mass transport mechanisms for this initial oxidation regime are discussed.

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The modelling of silicon oxidation from 1 × 10−5 to 20 atmospheres

Cited by 63 publications

References 12 publications

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Rapid thermal oxidation of silicon in ozone

Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method

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