The Monte Carlo simulation of the hole transport in thin films of PFO:MEH-PPV

Bahrami, Mohsen; Mohajerani, Ezeddin

doi:10.1007/s10825-016-0800-y

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2019

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“…Hence, the predictions of the GDM were made on the basis of Monte Carlo simulation of hopping charge transport [1][2][3][4]. Monte Carlo simulation is considered as an idealized experiment with which one can study the charge transport in disorder system as function of several of parameters [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of charge transport in disordered organic systems using buffer lattice at the boundary

2019

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In this article, we present an alternative method for simulating charge transport in disordered organic materials by using a buffer lattice at the boundary. This method does not require careful tracking of carrier's hopping pattern across boundaries. Suitability of this method is established by reproducing the field dependence of mobility, carrier relaxation and carrier diffusion in disordered organic systems obtained by simulating the charge transport for the full length of the systems along the field direction without any boundary condition. The significance of the buffer lattice is emphasized by simulating field dependence of mobility without using a buffer lattice, which results in negative field dependence of mobility (NFDM) at low field regime due to the extra bias the carrier gains from the neglected hops at boundaries along field direction.

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Section: Introductionmentioning

confidence: 99%