Delafossite CuFe 1%x Ge x O 2 (0.0 : x : 0.1) semiconductors were synthesized by solid-state reaction. The effects of Ge concentration on microstructural, optical, magnetic and electrical properties were investigated. X-ray diffraction (XRD) analysis results reveal the delafossite structure of all the samples. The lattice spacing of CuFe 1%x Ge x O 2 decreased with increasing substitution of Ge at the Fe site. The optical properties measured at room temperature by UV-visible spectroscopy showed an absorption peak at 283 nm (4.38 eV). The corresponding direct optical band gap was found to decrease with increasing Ge content (from 3.69 eV for x = 0 to 3.61 eV for x = 0.10), exhibiting transparency in the visible region. The magnetic hysteresis loops measured at room temperature showed that the Ge-doped CuFeO 2 samples exhibit ferromagnetic behavior. The Curie temperature suggests that ferromagnetism originates from CuFe 1%x Ge x O 2 matrices. The substitution of Fe 3+ by Ge 4+ produces a mixed effect on the magnetic properties of CuFeO 2 delafossite oxide. The resistivity of CuFe 0.99 Ge 0.01 O 2 was observed to be >0.1 Ω&cm at room temperature.