The MOS-Type DEPFET Pixel Sensor for the ILC Environment

Andricek, L.; Fischer, P.; Giesen, F.; Heinzinger, K.; Herrmann, S.; Herz, D.; Karagounis, M.; Kohrs, R.; Kruger, H.; Lechner, P.; Lutz, G.; Moser, H.-G.; Peric, I.; Reuen, L.; Richter, R.H.; Sandow, C.; Schnecke, M.; Schopper, F.; Struder, L.; Torne, E. von; Treis, J.; Trimpl, M.; Velthuis, J.; Wermes, N.; Wolfel, S.

doi:10.1109/nssmic.2005.1596212

Cited by 2 publications

(2 citation statements)

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“…They behave as amplifying elements in macro-pixels silicon drift detectors [8]; are proposed as charged particle detectors [9] and matrixes are suitable as X-ray imaging detectors with extremely high energy resolution [10]. In addition the signal charge confmed in the potential well of the internal gate is not destroyed when read out and multiple readout of the signal charge is therefore possible, reaching sub-electron noise [11].…”

Section: The Depfet Devicementioning

confidence: 99%

Mapping of the response function of DePFET-based pixel sensors at different levels of charge injection

Castoldi

Guazzoni

Lechner

et al. 2011

2011 IEEE Nuclear Science Symposium Conference Record

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In DePFET (DEpleted P-channel Field Effect Transistor) Active Pixel Detectors, every pixel can be considered as a complete detector sub-unit. In fact it consists of a p-channel field effect transistor operated on a fully depleted bulk. It is a majority carrier device, as, if n-type material is used, in full depletion conditions a potential minimum for the electrons is formed. The charge collected in this potential minimum can steer the transistor current, acting as a so-called internal gate. In this way the first amplification stage is integrated on the detector chip with a detection fill factor that is around unity. Since the electrons (both coming from the signal and the leakage current) are collected in a potential minimum, the device has to be reset from time to time by emptying the corresponding internal gate. We conducted an experimental characterization of the response function of a small DePFET matrix at different levels of charge injection. In order to cover a wide dynamic range of charge injection the response function of the DePFET cell was measured both with an IR laser-based test facility and with mono-energetic protons. The aim of the measurements is two fold. On one side we probed the detector response and the internal charge transconductance as a function of the interaction time and of the charge injection level. On the other side we qualified the experimental technique in view of the test and model of the behavior of the sensitive cell designed to match the dynamic range foreseen at the XFEL source in Hamburg (D).

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Section: The Depfet Devicementioning

confidence: 99%

Mapping of the response function of DePFET-based pixel sensors at different levels of charge injection

Castoldi

Guazzoni

Lechner

et al. 2011

2011 IEEE Nuclear Science Symposium Conference Record

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“…For the use in future high energy physics vertex detection, where a spatial resolution far below 5 mm is required, linear DEPFET devices with pixel cells down to 22 Â 36 mm 2 have been fabricated [5]. Exploring their performance towards a micro vertex detector at the ILC, the radiation tolerance of the sensor against ionizing radiation has been shown up to a dose of 1 MRad using X-rays from a 60 Co source [6]. A thinning process for double sided silicon sensors has been developed that can be adapted to a DEPFET pixel production [7].…”

Section: Introductionmentioning

confidence: 99%