The nanostructure and mechanical properties of nanocomposite Nbx-CoCrCuFeNi thin films

Braeckman, Bert; Misják, F.; Radnóczi, G.; Čaplovičová, Mária; Djémia, Philippe; Têtard, Florent; Belliard, Laurent; Depla, Diederik

doi:10.1016/j.scriptamat.2017.06.046

Cited by 37 publications

(12 citation statements)

References 29 publications

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“…Using the Scherrer-equation (D out ∼ (FW HM) −1 ), sharp peaks with a small FWHM yield large (out-of-plane) domains D out . For sputtered as-deposited films, the in-plane domain size D in measured by TEM is very similar to the out-of-plane domain size D out as measured by XRD [43]. Therefore, in what follows, we will use the out-of-plane domain size as measured by XRD as a representative measure for the in-plane domain size and both in-plane and out-of-plane are simply referred to as the domain size D.…”

Section: Role Of Layer Thicknesssupporting

confidence: 69%

The Seebeck Coefficient of Sputter Deposited Metallic Thin Films: The Role of Process Conditions

Cougnon

Depla

2019

Coatings

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Because of their reduced dimensions and mass, thin film thermocouples are a promising candidate for embedded sensors in composite materials, especially for application in lightweight and smart structures. The sensitivity of the thin film thermocouple depends however on the process conditions during deposition. In this work, the influence of the discharge current and residual gas impurities on the Seebeck coefficient is experimentally investigated for sputter deposited copper and constantan thin films. The influence of the layer thickness on the film Seebeck coefficient is also discussed. Our observations indicate that both a decreasing discharge current or an increasing background pressure results in a growing deviation of the film Seebeck coefficient compared to its bulk value. Variations in discharge current or background pressure are linked as they both induce a variation in the ratio between the impurity flux to metal flux towards the growing film. This latter parameter is considered a quantitative measure for the background residual gas incorporation in the film and is known to act as a grain refiner. The observed results emphasize the importance of the domain size on the Seebeck coefficient of metallic thin films.

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Section: Role Of Layer Thicknesssupporting

confidence: 69%

The Seebeck Coefficient of Sputter Deposited Metallic Thin Films: The Role of Process Conditions

Cougnon

Depla

2019

Coatings

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“…These are focussed on mechanical properties [4][5][6], structure and morphology [7], electrical properties [8], and magnetic properties [9]. There has been a particular focus on thin films of the HEA CrFeCoNiCu, with [10][11][12][13][14][15] or without a sixth component [16,17].…”

Section: Introductionmentioning

confidence: 99%

“…More recent work employing pressed powder targets has examined the influence of the sixth element, including Nb [10,12], In, Ge [11] and Al [13]. The general trend is that increasing the content of the sixth element (frequently of larger radius) changes the FCC structure to amorphous, or BCC in the case of Al.…”

Section: Introductionmentioning

confidence: 99%

Thin films of AlCrFeCoNiCu high-entropy alloy by pulsed laser deposition

Cropper

2018

Applied Surface Science

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Pulsed laser deposition has been used to prepare thin films of the high entropy alloy AlCrFeCoNiCu. The 35 nm films were deposited in ultra-high vacuum onto glass at room temperature and above and analysed using X-ray diffraction and X-ray photoelectron spectroscopy. Films deposited at room temperature exhibit a mix of FCC and BCC reflections, the FCC crystallites having size similar to the film thickness, but the BCC crystallites are larger. The intensity of the reflections from both crystal structures reduce with increasing deposition temperature, the fall in BCC commencing at lower temperature than the FCC associated with a reduction of the content of Al and Cu. X-ray photoelectron spectroscopy shows that the films deposited at room temperature are closer to stoichiometry than those at higher temperatures. An important feature of the X-ray photoelectron spectroscopy depth profiles is surface segregation, the outer 3 nm of the high entropy alloy films has higher concentration of Al and, to a lesser extent, Cr. Highlights • The films exhibit mixed FCC and BCC structure. • With increasing deposition temperature, FCC and BCC reflections reduce associated with loss of Al and Cu. • Surface segregation enriches the surface of the films in Al and to a lesser extent Cr.

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“…Another example of a positive effect of impurities has been demonstrated by Gu et al 24 for diffusion barrier applications. The improvement of the mechanical properties of high entropy alloys (HEAs) was shown by Braeckman et al 25,26 The use of impurities to control the spatial ordering of islands has been demonstrated by Lee and Barab asi 27 and was more recently used to control the growth of graphene by Wu et al 28 It is clear that a deeper understanding of how impurities affect thin film growth-in a beneficial or detrimental way-is of great value. In the current study, the influence of impurities during the film growth of metals and alloys is therefore studied in a range for s between 0.01 and 10 or larger.…”

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Impurity dominated thin film growth

Cougnon

Dulmaa

Dedoncker

et al. 2018

Applied Physics Letters

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Magnetron sputter deposition was applied to grow thin metal films in the presence of impurities. These impurities are ambient gas molecules and/or atoms from the residual gas present in the vacuum chamber. Seven materials were investigated: four single element metals (Al, Ag, Cu, and Cr), two widely applied alloys (Cu 55 Ni 45 and Ni 90 Cr 10), and one high entropy alloy (CoCrCuFeNi). The thin films were analyzed using X-ray diffraction to determine the domain size, the film texture, and the lattice parameter. The same trend for all studied materials is observed. When the ratio between the impurity and metal flux towards the substrate is low, the domain size is not affected by the presence of the impurities. In this regime, the incorporation of the impurities affects the lattice parameter. At high flux ratios, the change of the domain size can be described by a power law with the exponent equal to À1/2 for all studied materials. A kinetic Monte Carlo code is used to demonstrate this observed trend.

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The nanostructure and mechanical properties of nanocomposite Nbx-CoCrCuFeNi thin films

Cited by 37 publications

References 29 publications

The Seebeck Coefficient of Sputter Deposited Metallic Thin Films: The Role of Process Conditions

The Seebeck Coefficient of Sputter Deposited Metallic Thin Films: The Role of Process Conditions

Thin films of AlCrFeCoNiCu high-entropy alloy by pulsed laser deposition

Impurity dominated thin film growth

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