the material response. In the present work, an ultrafast optoelectronic autocorrelation technique is used to directly measure the dynamical electrical properties of epitaxially strained VO 2 across the IMT. This approach differs from purely optical methods, such as pump-probe measurements, where electrical properties of the material must be inferred from reflected or transmitted light. While the optoelectronic autocorrelation technique uses a combination of optical excitation and electrical sensing, the method differs significantly from purely electrical VO 2 switching measurements that use high-amplitude voltage pulses to initiate the IMT. Purely electrical switching experiments have a relatively low temporal resolution due to the electrical readout, which is typically limited to nanosecond time scales. [11][12][13][14] The findings reported here show it is possible to transiently induce an insulator-metal-insulator phase transition cycle over a time interval less than 400 fs with a measured change in signal spanning two orders in magnitude. These dynamics contrast those of relaxed VO 2 , which typically exhibits a prolonged metallic phase that persists for nanoseconds after pulsed optical excitation. [15,16] Isolating solely the role of strain is challenging as differences in film thickness and morphology may also influence the material response. Nevertheless, the ultrafast response observed in the strained film suggests it may be possible to selectively activate the metallic phase without inducing a change in crystalline structure. Our findings are discussed within the context of recent findings that report a suppressed structural phase transition (SPT) in strained VO 2 [10,17] as well as works that consider intermediate states that separate the IMT and SPT. [18,19] These results have promising implications for optical or optoelectronic devices where fast switching and modulation are required.
Results and DiscussionThe films investigated in this work exhibit a temperaturedependent resistivity (Figure 1a) that demonstrates a clear IMT at a temperature, T IMT , of 341 and 296 K for relaxed and strained films, respectively. The relaxed films are oriented, single-phase VO 2 on c-cut Al 2 O 3 substrates and are used as a canonical material with a known electrical and SPT [3,4] against which the dynamical response of the strained films can be compared. The large shift in transition temperature for the strained film signifies the stabilization of the tetragonal phase due to the film adopting the lattice symmetry of the TiO 2 (001) substrate. [10] An ultrafast insulator-metal-insulator phase transition cycle in epitaxially strained vanadium dioxide films is observed. The films are characterized by optoelectronic autocorrelation measurements that reveal a 400 fs transient change in response spanning two orders in magnitude. These findings suggest a predominantly electronic mechanism and demonstrate the promise of this material for optoelectronic applications requiring fast, high-contrast switching.