The Nernst-Ettingshausen, Seebeck, and Hall effects in Sb2Te3 single crystals

Zhitinskaya, M. K.; Немов, С. А.; Иванова, Л. Д.

doi:10.1134/1.1434480

Cited by 17 publications

(8 citation statements)

References 8 publications

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“…The kinetic coefficients σ ij , S ij , and R ijk of PbSb 2 Te 4 are seen to be strongly anisotropic. As already pointed out in [2], the anisotropy of the Seebeck coefficient of PbSb 2 Te 4 at T = 300 K ( ∆ S ≈ 80 µ V/K) exceeds considerably that of the binary, strongly anisotropic compound Sb 2 Te 3 [4] ( ∆ S = 17 µ V/K). The anisotropy observed in the electrical conductivity of PbSb 2 Te 4 ( σ 11 / σ 33 = 10.1 at T = 300 K) is also markedly larger than that of Sb 2 Te 3 crystals ( σ 11 / σ 33 = 1.8).…”

Section: Methodssupporting

confidence: 53%

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10.1007/s11451-008-1002-7

2010

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The possible origin of the considerable anisotropy of the Seebeck coefficient in crystals of the multicomponent layered compound p -PbSb 2 Te 4 is analyzed. It is shown that the experimental data on the thermopower anisotropy in p -PbSb 2 Te 4 , together with the temperature dependences of the electrical conductivity along the trigonal axis and in the cleavage plane, can be explained by in terms of a one-band spectrum model and a mixed mechanism of hole scattering under the assumption that scattering from acoustic phonons and impurity ions is dominant in the cleavage plane and along the C 3 trigonal axis, respectively.

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Section: Methodssupporting

confidence: 53%

“…The strongly anisotropic Bi 2 Te 3 and Sb 2 Te 3 compounds studied earlier exhibited the opposite ratio between the Hall tensor components [4].…”

Section: Methodsmentioning

confidence: 76%

10.1007/s11451-008-1002-7

2010

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“…We note that the positive sign of the NernstEttingshausen tensor components in the impurity conductivity region in narrow gap V-VI semiconduc tors and in IV-VI semiconductors was not observed earlier [4][5][6][7].…”

Section: Resultsmentioning

confidence: 95%

Effect of copper doping on kinetic coefficients and their anisotropy in PbSb2Te4

et al. 2012

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In anisotropic PbSb 2 Te 4 and PbSb 2 Te 4 :Cu single crystals, nine main independent components of the Hall, electrical conductivity, thermopower, and Nernst-Ettingshausen effects and their anisotropy in the range 77-450 K have been studied. PbSb 2 Te 4 single crystals exhibit a high hole concentration (p ≈ 3 × 10 20 cm -3 ). Copper exhibits a donor effect and significantly (approximately by a factor of 2) reduces the hole concentration in PbSb 2 Te 4 . The temperature dependences of the kinetic coefficients, except for the Hall effect, have a form typical of the one band model. The significant anisotropy of the Hall coefficient R 123 /R 321 ≈ 2 at low temperatures corresponds to the multi ellipsoid model of the energy spectrum of holes in PbSb 2 Te 4 . An important feature of the data on transport phenomena is the high thermopower anisotropy (ΔS ≈ 60-75 μV/K) in the mixed conductivity region caused by the mixed scattering mechanism. Data on the anisot ropy of the transverse Nernst-Ettingshausen effect confirm the mixed mechanism of hole scattering; in the cleavage plane, scattering at acoustic phonons dominates, while in the trigonal axis direction, impurity scat tering appears significant. Doping with copper enhances the role of impurity scattering in the direction of the trigonal axis c 3 ; as a result, two components of the Nernst-Ettingshausen tensor Q 321 and Q 132 in the PbSb 2 Te 4 :Cu single crystal are positive at low temperatures, whereas, in the undoped crystal, only the Q 321 component is positive.

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“…For example, the thermomagnetic NernstEttingshausen effect is an extremely sensitive indicator of the scattering mechanism. It should be noted that an experimental study of kinetic effects give significant results only if it is collaborated with the theory of these phenomena [8][9][10][11][12][13][14].As an application of the kinetic theory of ideal gases, Drude derived the relationship between thermal and electrical conductive, which is in good agreement with the experimental law of Wiedemann-Franz [15].The theory of thermomagnetic phenomena is proposed by Sommerfeld and Franck [16,17], where assumed that the mean free path of the charge carriers does not depend on their energy, it provides only the positive contribution to the Nernst-Ettingshausen effect.…”

Section: Introductionmentioning

confidence: 97%

Calculation of the transverse Nernst-Ettingshausen effect of semiconductor with standard zone by using one-parameter Fermi functions

Мамедов¹,

Askerov²,

Akkuş³

2017

AIP Conference Proceedings

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A new analytical approach is proposed for the evaluation of the transverse Nernst-Ettingshausen effect of semiconductor with standard zone in the case of weak magnetic field. The obtained formula is expressed in terms of the one-parameter Fermi functions. One of the authors proposed efficient formulae for accurate evaluation of the oneparameter Fermi functions. This method gives satisfying results for arbitrary values of parameters and allows us to evaluate accurately of the Nernst-Ettingshausen transverse effect. The results show that proposed algorithm has high efficiency and accuracy for theoretical evaluations of the Nernst-Ettingshausen transverse effect.

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The Nernst-Ettingshausen, Seebeck, and Hall effects in Sb2Te3 single crystals

Cited by 17 publications

References 8 publications

10.1007/s11451-008-1002-7

10.1007/s11451-008-1002-7

Effect of copper doping on kinetic coefficients and their anisotropy in PbSb2Te4

Calculation of the transverse Nernst-Ettingshausen effect of semiconductor with standard zone by using one-parameter Fermi functions

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