In this work we report on the lattice location of implanted Ag in ZnO single-crystals, evaluated by means of the emission channeling technique. Following 60 keV low dose (2×10 13 cm −2 ) ion implantation, the β − emission patterns from 111 Ag were monitored with a position-sensitive detector as a function of annealing temperature up to 800ºC in vacuum. Our experiments revealed that in the as-implanted state around 30% of the Ag atoms are substitutional at the Zn site with root mean square displacements around 0.17-0.28 Å. Though this fraction did not change with increasing annealing temperature, upon annealing at 600°C the root mean square displacement of Ag from the Zn site increased considerably, followed by partial outdiffusion during 800°C annealing.