2017
DOI: 10.1117/12.2257872
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The new OPC method for obtaining the stability of MBAF OPC

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“…RB-SRAF is effective for simple designs but struggles with complex patterns, requiring frequent adjustments throughout development cycles [1]. On the other hand, MB-SRAF [2,3], including the more advanced Inverse Lithography Technology (ILT) [4,5], ensures high lithographic margin for intricate patterns. However, the computational complexity of ILT leads to excessive runtimes for full chip mask optimization.…”
Section: Introductionmentioning
confidence: 99%
“…RB-SRAF is effective for simple designs but struggles with complex patterns, requiring frequent adjustments throughout development cycles [1]. On the other hand, MB-SRAF [2,3], including the more advanced Inverse Lithography Technology (ILT) [4,5], ensures high lithographic margin for intricate patterns. However, the computational complexity of ILT leads to excessive runtimes for full chip mask optimization.…”
Section: Introductionmentioning
confidence: 99%