The Ni2+-LaNiO3/CdS hollow core–shell heterojunction towards enhanced visible light overall water splitting H2 evolution via HER/OER synergism of Ni2+/Ov

CuI/BaSnO3 Quantum Dot/ZnSnO3 Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

“…The charge carrier behaviors can be demonstrated through Mott−Schottky plots 19,62 Here, CuI is the p-type, and perovskite BaSnO 3 QD and ZnSnO 3 are the n-type (Figure 8a−c). 19,56 The corresponding Fermi levels (corrected by Ag/AgCl vs NHE) were 0.387 (VB-CuI), −0.349 (CB-BaSnO 3 QD), and −0.303 (CB-ZnSnO 3 ) V. After the formation of the CuI/BaSnO 3 QD/ZnSnO 3 p−n junction (Figure 8d), the Fermi levels (vs NHE) were regulated to 0.375 (VB-CuI), 0.126 (CB-BaSnO 3 QD), and 0.342 (CB-ZnSnO 3 ) V. Correspondingly, the CB of CuI was −2.625 V, the VB of BaSnO 3 QD and ZnSnO 3 were 3.912 and 4.303 V, respectively (vs NHE). This implies that E CB-CuI < E CB-BaSnOd 3 < E CB-ZnSnOd 3 and E VB-CuI < E VB-BaSnOd 3 < E VB-ZnSnOd 3 .…”

“…Carrier behavior plays a major role during photovoltaic conversion. ,, The decreased impedance (Figure S4a) indicates improved carrier migration and diffusion at the interface after dual-functional homologous perovskite BaSnO 3 QD’s modification. , Particularly, the minimum value observed in CuI/ZSO-BSO-2 suggests that carrier transportation is one of the main reasons for the improved photovoltaic efficiency. Additionally, carrier recombination is efficiently inhibited by the modification of BaSnO 3 QD, as supported by the remarkable decrease in PL (photoluminescence) (Figure S4b).…”

“…The charge carrier behaviors can be demonstrated through Mott–Schottky plots , 1 C 2 = prefix± 2 e ε ε 0 N normald ( E − E F B − K B T e ) …”

The transparent photovoltaic NiO/TiO2 orderly nanoarray pn junction via synergism of AgInS2 quantum dots and Ti3+ self-doping

“…5). 39,64 Corrected by Ag/AgCl (vs. 0.197 V), the Fermi levels (vs. NHE) are 1.159 V (VB-NiO), À0.138 V (CB-AgInS 2 QDs) and À0.454 V (CB-TiO 2 ). 64 Subsequently, with the reduction, the introduced Ti 3+ /O v causes a shallow donor level and makes the band gap shift slightly.…”

“…39,64 Corrected by Ag/AgCl (vs. 0.197 V), the Fermi levels (vs. NHE) are 1.159 V (VB-NiO), À0.138 V (CB-AgInS 2 QDs) and À0.454 V (CB-TiO 2 ). 64 Subsequently, with the reduction, the introduced Ti 3+ /O v causes a shallow donor level and makes the band gap shift slightly. 48,49 There, the CB (vs NHE) of Ti 3+ -TiO 2 shifts to -0.467(Ti 3+ -TiO 2 -1), À0.482(Ti 3+ -TiO 2 -2), -0.495(Ti 3+ -TiO 2 -3) and -0.509(Ti 3+ -TiO 2 -4) V, and the band gaps decrease to 2.831-2.893 eV (Fig.…”