The nonequilibrium inversion layer charge of the thin-film SOI MOSFET

Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs

“…Following [17], the front channel inversion charge density (normalized to WLC ox ) is approximated by…”

“…(9) a coupling equation relating the front and back surface potentials is required. The rigorous form is [17,18] …”

“…Here b ¼ 1=/ t ; / t is the thermal voltage, V CB is the ''channel voltage" or, more precisely, imref splitting. The standard boundary conditions at the front and back interfaces are [17,3,18] …”

“…The boundary conditions (4) and (5) are written in the form used in [3,17,18] and neglect the field penetration in the substrate region x > t si þ t box (cf. Fig.…”

A General Analytical solution to the One-Dimensional Undoped Oxide-Silicon-Oxide System

“…Quantum confinement effects will not be taken into account here, although they may be incorporated later to accommodate devices of silicon film thicknesses smaller than 5 nm where these effects start to become relatively significant. A one dimensional Poisson equation across the body thickness of this device can be written as [12,13] x gn [eA -e ]k' 1 (1) where ni is the intrinsic carrier density, q is the electronic charge, ,6= q/kT is the inverse of the thermal voltage, £s is the silicon permittivity and x is the direction across the channel thickness. Following the traditional change of variable in Poisson equation:…”