The nonlinear optical properties of GaAs-based quantum wells with Kratzer–Fues confining potential: Role of applied static fields and non-resonant laser radiation

Ungan, F.; Martı́nez-Orozco, J.C.; Restrepo, R.L.

doi:10.1016/j.ijleo.2019.03.129

Cited by 17 publications

(3 citation statements)

References 44 publications

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“…The average temporal effect of the non-resonant laser field is to produce changes in the confinement potential, which confines the electron into the heterostructure region. This interaction can result in interesting effects, such as the generation of harmonics [20][21][22][23][24] and the shift in the position of the optical absorption peaks at higher energies as the intensity of the laser field increases [25,26].…”

Section: Introductionmentioning

confidence: 99%

Influence of a Non-Resonant Intense Laser and Structural Defect on the Electronic and Optical Properties of a GaAs Quantum Ring under Inversely Quadratic Potential

et al. 2023

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We investigated the impact of a non-resonant intense laser, structural defects, and magnetic fields on the electronic and optical properties of a simple GaAs quantum ring under the inverse quadratic Hellmann potential, using the effective mass and parabolic band approximations. We obtained the energies and wavefunctions by solving the 2D Schrodinger’s equation using the finite-element numerical technique to analyze this. We considered circular polarization to calculate the dipole matrix elements, which were influenced by the laser field and structural defects in the system. This enabled us to study the linear absorption coefficients. Our results demonstrated that the presence of a laser field and a structural defect disrupt the axial symmetry of the problem. When only the non-resonant laser was present, a pattern of excited states appeared in pairs, which oscillated with the magnetic field. However, the amplitude of the oscillation decreased as the magnetic field strength increased, and these oscillations disappeared when the structural defect was introduced. It was also noted that the intensity and position of the linear optical absorption peaks exhibited a non-monotonic behavior with the magnetic field in the absence of a structural defect. However, this behavior changed when the structural defect was present, depending on the type of polarization (right or left circular). Finally, a clear improvement in the absorption peaks with an increase in the laser parameter is reported.

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Section: Introductionmentioning

confidence: 99%

Influence of a Non-Resonant Intense Laser and Structural Defect on the Electronic and Optical Properties of a GaAs Quantum Ring under Inversely Quadratic Potential

et al. 2023

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“…Due to the importance of Kratzer potential, lowdimensional studies have captured a lot of attention [33,34] of many researchers. Batra and Prasad [35] have studied the optical properties of conduction band electrons of spherical QD in Kratzer potential, in the work, they have shown that not only parameters of the QD but also the parameters of Kratzer potential influence optical properties quite drastically.…”

Section: Introductionmentioning

confidence: 99%

Hydrogenic impurity effect on optical properties of Wannier-Mott exciton confined in a spherical quantum dot with Kratzer potential under magnetic field

Varsha

Giri²,

Arora³

et al. 2022

Rev. Mex. Fís.

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Confinement effects of Kratzer potential on a Wannier-Mott Exciton(W-M) are studied in a spherical quantum dot(QD) in the presence of a static magnetic field. Time independent Schr$\ddot{o}$dinger equation is solved numerically to obtain the energy states. The excitonic transitions so realized have been used to explore the non-linear optical properties that are important for optical characterization of materials such as the optical absorption coefficients (ACs) and refractive index changes (RICs). Impact of magnetic field, strength of the laser field and transition parameters using familiar compact density matrix approach are also analyzed. It has been observed that optical properties get radically modified under confinement effects. Also, the shift of degeneracy of different excitonic energy levels with the magnetic field in confinement potential has been reported for the first time for W-M exciton in the spherical quantum dot, the study that may have crucial input to the literature and myriad of practical implications.

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“…The quantum wells have been widely studied due to their optical and electronic properties. [7][8][9][10][11] There are a great variety of structures based on quantum wells, such as heterostructures and doped deltas, the latter ones are of great importance. A two-dimensional layer doping creates an approximately Vshaped doped potential profile, where charge carriers form a two-dimensional gas.…”

Section: Introductionmentioning

confidence: 99%

Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells*

Noverola-Gamas¹,

Gaggero‐Sager²,

Oubram³

2019

Chinese Phys. B

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In the framework of the Thomas–Fermi (TF) approach, a model for the p-type double-δ-doped (DDD) system in GaAs is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped GaAs.

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The nonlinear optical properties of GaAs-based quantum wells with Kratzer–Fues confining potential: Role of applied static fields and non-resonant laser radiation

Cited by 17 publications

References 44 publications

Influence of a Non-Resonant Intense Laser and Structural Defect on the Electronic and Optical Properties of a GaAs Quantum Ring under Inversely Quadratic Potential

Influence of a Non-Resonant Intense Laser and Structural Defect on the Electronic and Optical Properties of a GaAs Quantum Ring under Inversely Quadratic Potential

Hydrogenic impurity effect on optical properties of Wannier-Mott exciton confined in a spherical quantum dot with Kratzer potential under magnetic field

Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells*

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