“…119 BiVO 4 is an n-type semiconductor with a bandgap of about 2.4 eV that is a powerful photocatalyst under visible light, 120 whereas cuprous oxide (Cu 2 O) is a p-type semiconductor with the bandgap of about 2−2.5 eV that is transparent for only part of the visible light range. 121 ZnO is an n-type semiconductor with a bandgap of 133 Ag-AgBr/ Al-MCM-41, 134 Ti−Al−SBA-15, 135 C/TiO 2 @MCM-41, 136 graphene oxide (GO), 137 Ag-BiVO 4 , 138 Pt-RuO 2 /BiVO 4 , 139 MoO 3 -TMU-5, 140 C/TiO 2 @MCM-41, 141 Ti 3 C 2 /g-C 3 N 4 , 142 CeF 3 /g-C 3 N 4 , 143 g-C 3 N 4 /ZnTcPc, 144 MTcPc/SnO 2 , 122 Ni− Co 2 layered double hydroxides (LDH)/Fe 3 O 4 , 145 Ni−Fe 2 LDH, 145 Co−Fe 2 LDH, 145 Fe 3 O 4 @SiO 2 /Bi 2 WO 6 /Bi 2 S 3 , 146 Cu/Cu 2 O/BiVO 4 /Bi 7 VO 13 , 120 AgCl/PbMoO 4 , 147 BiVO 4 (CoCuAl/BiVO 4 ), 148 BiP 1−x V x O 4 /ATP, 149 Ag 2 WO 4 / Mn 3 O 4 , 150 Ag/AgI/α-MoO 3 , 151 AgI/Bi 2 O 3 , 152 and Ag− Bi 2 WO 6 , 153 were employed in the PODS process.…”