The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors

Jóźwikowski, K.; Piotrowski, J.; Jóźwikowska, A.; Kopytko, M.; Martyniuk, Piotr; Gawron, W.; Madejczyk, P.; Kowalewski, Andrzej; Markowska, O.; Martyniuk, Andrzej; Rogalski, Antoni

doi:10.1007/s11664-017-5513-x

Cited by 3 publications

(1 citation statement)

References 42 publications

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“…Exemplary 1/f noise calculations for HgCdTe photodiodes were performed, based on McWhorter’s theory [ 29 , 43 , 44 , 45 ] or taking into account carrier mobility/scattering fluctuations [ 38 , 46 ]. The dislocations intercepting the junction were found to induce TAT and 1/f noise and are supposed to cause bandgap narrowing and getter impurities that can act as active trap centers [ 30 , 32 , 38 , 42 , 46 , 47 , 48 ].…”

Section: Noise Sourcesmentioning

confidence: 99%

LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

Pawluczyk

Żbik

Piotrowski

2023

Sensors

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We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, forming the tetra-lateral PSD, with a photosensitive area of 1 × 1 mm2, operating at 205 K in the 3–11 µm spectral range, capable of achieving a position resolution of 0.3–0.6 µm using 10.5 µm 2.6 mW radiation focused on a spot of the 1/e2 diameter 240 µm, with a box-car integration time of 1 µs and correlated double sampling.

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Section: Noise Sourcesmentioning

confidence: 99%

LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

Pawluczyk

Żbik

Piotrowski

2023

Sensors

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II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays

Войцеховский

Nesmelov

Dzyadukh

et al. 2023

Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

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Numerical estimation of photon reabsorption process and optical crosstalk in arrays of HgCdTe photodiodes

Jóźwikowska

Jóźwikowski

2019

Opt Quant Electron

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The effect of photon reabsorption (recycling) on photoelectric parameters of non-equilibrium P + nN + photodiodes, for example the pixels of the detector array, was analyzed. We solved the system of transport equations additionally extended by two balances equations for photons. It was shown that the density of photons in photodiodes is strongly dependent on the concentration of charge carriers. This phenomenon results in a drastic reduction in the rate of radiative recombination and generation in analyzed photodiodes. Additionally, the phenomenon of optical crosstalk between the nearest pixels in the matrix was examined. The increase in the dark current caused by this phenomenon was estimated. It depends on the size of the pixel, the distance between pixels, and the value of bias voltage. The increase in the current is around 0.5% for a pixel with surface 10 × 10 µm 2 , and around 1% for one with 5 × 5 µm 2 , both reverse biased with 0.2 V. Keywords Non-equilibrium mode of operation • HgCdTe photodiodes • Reabsorption effect • Optical crosstalk This article is part of the TopicalCollection on Numerical Simulation of Optoelectronic Devices,NUSOD' 18.

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The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors

Cited by 3 publications

References 42 publications

LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays

Numerical estimation of photon reabsorption process and optical crosstalk in arrays of HgCdTe photodiodes

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