Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states ofA well pronounced MIT was only observed in VO 2 films grown in a very narrow range of oxygen partial pressure P(O 2 ). The films grown either in lower (< 10 mTorr) or higher P(O 2 ) (> 25 mTorr) result in V 2 O 3 and V 2 O 5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO 2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.
TextVanadium oxides are one of few binary oxides exhibiting intriguing strong correlation effects that are critically dependent upon the oxidation state of vanadium. . [6][7][8][9] In particular, the MIT near room temperature makes this phase most attractive. (3) V 2 O 5 (3d 0 , V +5 ) that is an insulator and has an orthorhombic layered structure (a = 11.54 Å, b = 3.57 Å, c = 4.38 Å). Its structure makes it attractive for electrode applications in, e.g., Li-ion batteries 10,11 and actuators. 12 As was found for perovskite oxides, [13][14][15] it is tempting to consider these vanadium oxides as oxygen sponges, by which one can obtain a strong contrast in the physical properties by reversibly transitioning between the phases. Moreover, the redox process Here, we report the growth control of the valence state in vanadium oxides by systematically controlling P(O 2 ) during pulsed laser deposition, followed subsequently by postannealing under highly oxidizing conditions. We found that the room temperature MIT could be 5 observed only in VO 2 thin films grown in a very narrow window of P(O 2 ). Moreover, interestingly, the MIT behavior could be further enhanced by post-annealing in high-pressure oxygen, implying that the optimal growth pressure to obtain phase pure films with high crystallinity was not enough to fully oxidize the films. This result ultimately stresses the importance of oxygen content in VO 2 that plays a critical role in the sharpness and resistivity r...