The observation of mobile ion of 40nm node by Triangular Voltage Sweep

Huang, Clement; Liang, James W.; Juan, Alex; Su, Kang

doi:10.1109/ipfa.2014.6898164

Cited by 1 publication

(1 citation statement)

References 5 publications

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“…Hence, ΔQ m can be extracted by TVS at RT and HT as shown in figure 6 [26,39]. The movement of mobile ions across the SiO 2 layer contributes to the peak current regardless of the Q it [26,40,41]. The ionic current peak at 300 K was far less than that at 423 K, indicating that only a small number of mobile ions can move at RT.…”

Section: Charge Separation Of V Fb Shift Induced By Varied Temperatur...mentioning

confidence: 99%

Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress

Yang¹,

Gu²,

Yin³

et al. 2019

J. Phys. D: Appl. Phys.

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Bias temperature stresses (BTSs) are critical factors that cause severe threshold voltage (V th ) instability in silicon carbide (SiC) metal-oxide-semiconductor (MOS) devices. In this work, we studied the behavior of flatband voltage (V fb ) instability in 4H-SiC MOS capacitors under various BTSs from low temperature (LT) to high temperature (HT) considering the combined effects of interfacial traps and mobile ions. Results showed that nitrogen and nitrogen-hydrogen plasma passivation improved the V fb instability. The initial sweeping gate voltage determined the direction of V fb shift. BTSs from LT to HT induced different capacitance-voltage hysteresis characteristics. The V fb shift was further separated according to the contribution of the interface trapped, oxide trapped, and mobile ionic charges. At LT, the charge trapping dominated the shift behavior. The interface trap density was also extracted by another high-frequency and quasi-static method, which was the same as the separated interface trap density at 100 K, confirming the separation correctness of V fb shift. At room temperature, charge trapping and mobile ions with very weak mobility contributed to the V fb shift. At HT, mobile ions that counteracted the charge-trapping effect determined the V fb shift, although the additional traps were activated in the interface and oxide. Physical models of V fb instability under different temperature stresses were proposed. Finally, we chose the 100 K, 273 K, and 423 K to analyze gate bias stresses and stress time induced V fb instabilities as well as their mechanisms.

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