The onset of secondary slip in the plastic deformation of tetrahedrally bound semiconductors

The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: atomistic origin of planar defect formation

“…At a lower strain rate, the hardness is found to be ∼10 GPa and increases with the strain rate. Increasing hardness with strain rate can be explained with the increase in the dislocation density owing to its multiplication [17] by the shear stress component following the strain gradient plasticity model. [18] The stress relaxation at the tip of the indentation can be understood from the strain rate exponent [19] m = ∂ ln H/∂ ln • ε ) and activation volume [13,18] , k B , and absolute temperature, T) analysis.…”