The optical and electrical properties of amorphous gallium/titanium co-doped indium oxide films based on oxygen flow dependence

Abstract

Amorphous gallium/titanium (Ga,Ti) co-doped indium oxide (In2O3) (GTiIO) films present significant potential as transparent conducting electrodes for use in flexible electronic devices. Amorphous GTiIO films were grown on silicon and glass substrates using linear-facing target sputtering and various oxygen flow rates. Transmittance was as high as 80% in the visible range for O2 flow rates of 0.3, 0.7, and 1.0 SCCM. The lowest resistivity was obtained at f(O2) = 0.3 SCCM with 0.47 mΩ cm. Dielectric functions were determined, and optical gap energies were estimated as close to 3.4 eV using a Tauc formula. We show that Drude tail amplitude is proportional to the carrier density. An electronic transition was found at 2.7 eV from the optical spectra of the thin film at f(O2) = 0 SCCM; this transition was designated to be an inter-conduction band transition from the first to the second conduction band. Using Hall parameters and Drude tail amplitudes in dielectric functions, the effective mass of GTiIO films was determined as 0.398 m0 at f(O2) = 0.3 SCCM.

Ag0/Au0 nanocluster loaded Bi2O4 photocatalyst for methyl orange dye photodegradation

“…The peak at 530.7 eV is attributed to dissociative O − ions or oxygen vacancies. 30 This result means that there could be more defects on the surface of the material caused by the vacancy of the oxygen from the lattice. This change leads to an increased photocatalytic efficiency.…”

Fabrication of High Transmittance and High Mobility Transparent Conductive Oxide Films: Hydrogen-doped Indium Oxide

“…Additionally, the thickness (d) of TCO films is also close to the transmittance and sheet resistance. Recent research has demonstrated the potential for replacing tin dopants in indium oxide with other metals, such as titanium [4], tungsten [5], molybdenum [6], and hafnium [7], to achieve higher carrier mobility and improved NIR transparency while maintaining comparable conductivity. However, the growth temperatures required for these TCOs tend to be relatively high (> 300 ℃), which exceeds the melting point of photoresists commonly used in many applications.…”