The optical properties of CdS crystal grown by the sublimation method

Hong, Kwangjoon; Jeong, T. S.; Yoon, Chang Joo; Shin, Yu-Ju

doi:10.1016/s0022-0248(00)00491-7

Cited by 54 publications

(19 citation statements)

References 23 publications

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“…23 The acceptor level located 0.29-0.30 eV above the valence band [23][24][25] is believed to originate from an impurity rather than from a native defect in CdS. Hong et al 26 observe this transition at 2.09 eV. In contrast, some authors propose that the PL peak observed at 2.07 eV for Cd-rich CdS is caused by a "free-to-bound" transition from an unknown donor level located 0.51 eV below the conduction band to the valence band.…”

Section: A Pl On Cds Films Grown By Cssmentioning

confidence: 99%

Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition

Abken

Halliday

Durose

2009

Journal of Applied Physics

124

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Photoluminescence ͑PL͒ measurements were used to study the effect of postdeposition treatments by annealing and CdCl 2 activation on polycrystalline CdS layer grown by close-spaced sublimation ͑CSS͒ and chemical bath deposition ͑CBD͒. CdS films were either annealed in a temperature range of 200-600°C or CdCl 2 treated between 300-550°C. The development of "red," "intermediate orange," "yellow," and "green" luminescence bands is discussed in comparison with PL assignments found in literature. PL spectra from CdS layer grown by CSS are dominated by the yellow band with transitions at 2.08 and 1.96 eV involving ͑Cd i -A͒, ͑V S -A͒ complex states where A represents an acceptor. Green luminescence bands are observed at 2.429 and 2.393 eV at higher annealing temperature of 500-600°C or CdCl 2 treatment above 450°C, and these peaks are associated with zero and a longitudinal optical phonon replica of "free-to-bound" transitions. As grown CBD-CdS films show a prominent red band with four main peaks located at 1.43, 1.54, 1.65, and 1.77 eV, believed to be phonon replicas coupled with local vibrational modes. This remains following postdeposition treatment. The red luminescence is associated with V S surface states and in the case of CdCl 2 treatment with ͑V Cd -Cl S ͒ centers. Postdeposition treatments of CBD and CdS promote the evolution of an intermediate orange band at 2.00 eV, most likely a donor-acceptor pair, and a yellow band at 2.12 eV correlated with ͑Cd i -V Cd ͒ centers. The green luminescence bands observed at 2.25 and 2.34 eV are associated with transitions from deep donor states ͑e.g., Cd i ͒ to the valence band. These states form due to crystallinity enhancement and lattice conversion during annealing or CdCl 2 activation. Observed changes in PL bands provide detailed information about changes in radiative recombination centers in CdS layer, which are suggested to occur during device processing of CdTe/CdS thin film solar cells.

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Section: A Pl On Cds Films Grown By Cssmentioning

confidence: 99%

Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition

Abken

Halliday

Durose

2009

Journal of Applied Physics

124

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“…which give the estimated band gap of HgS and CdS to be ca. 2.25 eV (bulk HgS 620 nm , 2.00 eV[8]) and 2.48 eV (bulk CdS 512 nm,2.42 eV[25]). A preliminary photoluminescence measurement on CdS powder with the excitation wavelength at 455 nm is shown inFig.…”

mentioning

confidence: 99%

Directionally dendritic growth of metal chalcogenide crystals via mild template-free solvothermal method

Qin

Fang

Zhao

et al. 2005

Journal of Crystal Growth

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“…4 displays the bandgap variation of the CGS layer as a function of temperature. The temperature dependence of the band-gap energy in our experiment is well fitted numerically by the following formula [18,19]:…”

Section: Optical Propertiesmentioning

confidence: 66%

Structural and optical properties of CuGaSe2 layers grown by the hot wall epitaxy method

You

Hong

Jeong

et al. 2008

Journal of Crystal Growth

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The optical properties of CdS crystal grown by the sublimation method

Cited by 54 publications

References 23 publications

Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition

Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition

Directionally dendritic growth of metal chalcogenide crystals via mild template-free solvothermal method

Structural and optical properties of CuGaSe2 layers grown by the hot wall epitaxy method

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