The optical research progress of nanophosphors composed of transition elements in the fourth period of near-infrared windows I and II for deep-tissue theranostics

Abstract

Research in the field of nano-optics is advancing by leaps and bounds, among which near-infrared (NIR) light optics have attracted much attention. NIR light has a longer wavelength than visible...

ZGSO Spinel Nanoparticles with Dual Emission of NIR Persistent Luminescence for Anti-Counterfeiting Applications

“…The optical window in NIR (or SWIR) ranges can be artificially divided into deep-red NIR-I (700–950 nm), for which a Si-based detector could be used, and NIR-II (1000–1400 nm) and NIR-III (1500–1700 nm) subregions, for which an InGaAs-based detector is required [ 21 , 22 , 23 ]. However, current anti-counterfeiting technologies face the challenge of low security and the inconvenience of being limited to visible light emission as emitters in the second and even third optical windows are required [ 24 , 25 ]. Ni 2+ and Er 3+ ions, for example, could play an excellent role as emitters due to their luminescence in NIR-II and NIR-III [ 24 , 25 , 26 , 27 , 28 ].…”

“…However, current anti-counterfeiting technologies face the challenge of low security and the inconvenience of being limited to visible light emission as emitters in the second and even third optical windows are required [ 24 , 25 ]. Ni 2+ and Er 3+ ions, for example, could play an excellent role as emitters due to their luminescence in NIR-II and NIR-III [ 24 , 25 , 26 , 27 , 28 ]. Indeed, previous studies in the field have proposed the use of RE 3+ ions in Sn-free ZGO NPs as sensitizers to enhance the NIR-I persistent luminescence of Cr 3+ at 700 nm [ 29 , 30 , 31 , 32 , 33 ].…”

Long-Wavelength Near-Infrared Divalent Nickel-Activated Double-Perovskite Ba2MgWO6 Phosphor as Imaging for Human Fingers

“…The NIR pc-LEDs greatly simplifies the package of NIR devices and reduces the cost, which has become the focus of current research. – Also, by well controlling the concentration of Ni 2+ and adjusting the thickness of the emitting phosphor, leakage of the UV light can be minimized. Recently, most of the broadband NIR luminescence is reported in the NIR-I or NIR-II region, and the luminescence wavelength of almost all phosphors is less than 1600 nm. ,– ,– However, broadband long-wavelength NIR luminescent materials covering the NIR-III region have been rarely reported and have proceeded slowly. Therefore, further exploration and detailed studies on high-performance NIR-III luminescent materials are urgent issues at present.…”

Transition metal and rare earth doped Zn1.3Ga1.4Sn0.3O4 persistent phosphors for anti-counterfeiting applications

“…Although we have reported NIR-I PersL of Cr 3+ ions in bulk Zn1.3Ga1.4Sn0.3O4 (ZGSO) and others phosphors 16 corresponding to the 2 E → 4 A2 ( 4 F) transition (at about 700nm), 17 emitters usable in the NIR-II (1000-1400 nm) optical windows are highly required. 18,19 Ni 2+ ions for example could play an excellent role as emitters thanks to their luminescence in NIR-II. [18][19][20][21][22] As our previous studies proposed the use of co-doping in normal ZGO hosts as sensitizers to enhance the NIR-I PersL of Cr 3+ at 700 nm, [23][24][25][26][27] it appears interesting to evaluate the effect of co-doping by Er 3+ ions in the ZGSO NPs on their NIR-I and NIR-II PersL as well as their potential for anti-counterfeiting applications.…”

“…18,19 Ni 2+ ions for example could play an excellent role as emitters thanks to their luminescence in NIR-II. [18][19][20][21][22] As our previous studies proposed the use of co-doping in normal ZGO hosts as sensitizers to enhance the NIR-I PersL of Cr 3+ at 700 nm, [23][24][25][26][27] it appears interesting to evaluate the effect of co-doping by Er 3+ ions in the ZGSO NPs on their NIR-I and NIR-II PersL as well as their potential for anti-counterfeiting applications.…”