The optimised design and characterization of 1200 V / 2.0 mΩ cm² 4H-SiC V-groove trench MOSFETs

Abstract

V-groove trench MOSFETs with the 4H-SiC{0-33-8} face as the trench sidewall for the channel region have been investigated. The on-resistance and breakdown voltage strongly depend on the aperture ratio of the buried p + regions. The VMOSFETs with the buried p + regions of 71% on a 6-inch wafer exhibited a low specific on-resistance of 2.0 m cm 2 with 1200 V blocking voltage. The threshold voltage is 2.3 V at 175 o C, which shows the VMOSFETs have tolerability for an erroneous ignition under high temperature. The switching capability showed low switching losses over DMOSFETs on 4 o off 4H-SiC(0001) face and normal operation under fast switching repetitive test (40 Vns -1 ). The stability of the threshold voltage was demonstrated by HTGB tests. I.978-1-4799-6261-7/15/$31.00 ©2015 IEEE

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