The optimization of Ta buffer layer in magnetron sputtering IrMn top spinvalve

Liu, Huarui; Ren, Tian‐Ling; Qu, Bingjun; Liu, Litian; Ku, Wanjun; Li, Wei

doi:10.1016/s0040-6090(03)00952-0

Cited by 13 publications

(5 citation statements)

References 10 publications

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“…The absence of the Co (111) peak along with any other Co peaks in the GI spectrum can be also due to the absence of prevailing texture in the film. With regard to the Ta buffer layer, the same diffraction peaks were also observed in [43] when Ta was sputtered onto an SiO 2 substrate and was attributed to a Ta (100) textured film. The different intensities of Ta diffraction peaks, as demonstrated in Figure 1c, at the same layer thicknesses, can be attributed to different textures of FeMn and IrMn underlying layers.…”

Section: Structure Propertiessupporting

confidence: 55%

Temperature Dependence of Magnetization Dynamics in Co/IrMn and Co/FeMn Exchange Biased Structures

Dzhun,

Gerasimenko,

Ezhov

et al. 2023

Magnetochemistry

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Thin film ferromagnet/antiferromagnet (F/AF) exchange biased structures that are widely used in GMR spin valves are considered nowadays as promising systems for antiferromagnetic spintronic and spin-orbitronic devices. Here, the temperature dependences of magnetization dynamics in Co/IrMn and Co/FeMn F/AF structures are investigated using ferromagnetic resonance (FMR) in comparison to a free Co layer. A strong additional decrease in the resonance field was observed in Co/IrMn with a temperature decrease attributed to the rotatable anisotropy increase, which almost vanished at room temperature. In contrast to Co/IrMn, the contribution of the rotatable anisotropy in Co/FeMn is much weaker, even though it exists at RT, it is negative, and slightly varies with the temperature and resonance field shift in Co/FeMn. This is mainly due to unidirectional exchange anisotropy. FMR linewidth for the free Co layer increases with decreasing temperature and is accompanied with a slow relaxation process, while the additional contribution to FMR line broadening in Co/IrMn and Co/FeMn structures is correlated with variation in the exchange anisotropy. The observed results are discussed based on structural and surface morphology and magnetization reversal characterization using X-ray diffraction, atomic force microscopy, and vibrating sample magnetometry data.

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Section: Structure Propertiessupporting

confidence: 55%

Temperature Dependence of Magnetization Dynamics in Co/IrMn and Co/FeMn Exchange Biased Structures

Dzhun,

Gerasimenko,

Ezhov

et al. 2023

Magnetochemistry

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“…This phase is formed in the buffer layer of sample S Ta , since its peak does not appear in the pattern of S Nb . The formation of β-Ta phase is also found when Ta is deposited on SiO 2 or naturally oxidized Si substrates [16]. The (111) and (200) reflections of fcc-IrMn are peaked at 2θ ¼ 42.95°and 49.85°, respectively, for S Nb ; and at 2θ ¼ 42.62°and 49.61°, respectively, for S Ta ; these peaks are shifted to higher angles when compared to the standard bulk IrMn: 2θ ¼ 41.40°and 48.17°, respectively.…”

Section: Resultsmentioning

confidence: 87%

Effects of Nb buffer layer on superconducting and magnetic behavior of IrMn/NiFe/Nb/NiFe spin-valves

Hernandez

Sousa

Litterst

et al. 2015

Journal of Magnetism and Magnetic Materials

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“…The nominal stoichiometries of CoFeB and IrMn targets were Co0.4Fe0.4B0.2 and Ir0.22Mn0.78 (in the paper, for sake of simplicity we will call them CoFeB and IrMn, respectively, without specifying the elemental composition). The Ta(5)/Ru(18)/Ta(3) buffer layer was used to avoid CoFeB intermixing with the substrate, to improve its crystallization [36] and the [111] texture of IrMn, which determines the exchange bias with CoFeB [37]. The IrMn thickness (tIrMn) was varied between 3.5 and 8 nm to investigate its influence on the IrMn blocking temperature.…”

Section: Methodsmentioning

confidence: 99%

Blocking Temperature Engineering in Exchange-Biased CoFeB/IrMn Bilayer

et al. 2018

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In this paper we report on the magnetic and chemical characterization of the exchange-biased CoFeB/IrMn bilayers, grown by magnetron sputtering on a Si-based platform and capped by either a Ru or MgO/Ru overlayer. For Ru capping, the blocking temperature monotonously increases with the IrMn thickness within the investigated range (3.5-8 nm). On the contrary, for MgO/Ru capping, the exchange bias is inhibited below 6 nm, whereas above 6 nm the magnetic behavior is the same of Ru-capped films. The chemical analysis reveals a significant dependence of the Mn content from the capping layer for thin IrMn films (2.5 nm), whereas the difference disappears when IrMn becomes thick (7 nm). Our work suggests that a non-uniform composition of the IrMn films directly affects the exchange coupling at the IrMn/CoFeB interface.

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The optimization of Ta buffer layer in magnetron sputtering IrMn top spinvalve

Cited by 13 publications

References 10 publications

Temperature Dependence of Magnetization Dynamics in Co/IrMn and Co/FeMn Exchange Biased Structures

Temperature Dependence of Magnetization Dynamics in Co/IrMn and Co/FeMn Exchange Biased Structures

Effects of Nb buffer layer on superconducting and magnetic behavior of IrMn/NiFe/Nb/NiFe spin-valves

Blocking Temperature Engineering in Exchange-Biased CoFeB/IrMn Bilayer

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