The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers

Abstract

In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot-wall CVD reactor. The research aimed to investigate the impact of varying the C/Si ratio and temperature while also changing the N2 flow rate and N2 flow ratio on the growth rate (thickness), doping, surface roughness, and uniformity of the large-size 4H-SiC epitaxial layer. The results indicate that the growth rate and thickness uniformity of the film increases with an increase in the C/Si ratio. Additionally, adjusting the N2 flow rate in a timely manner based on the change in the C/Si ratio is crucial to achieving the best epitaxial layer doping concentration and uniformity. The study found that, as the temperature increases, the film thickness and thickness uniformity also increase. The maximum thickness recorded was 6.2 μm, while the minimum thickness uniformity was 1.44% at 1570 °C. Additionally, the surface roughness reached its lowest point at 0.81 nm at 1570 °C. To compensate for the difference in thickness and doping concentration caused by temperature distribution and uneven airflow, the N2 flow ratio was altered. In particular, at a growth temperature of 1570 °C, a N2 flow ratio of 1.78 can improve the uniformity of doping by 4.12%.

Advances and challenges in 4H silicon carbide: defects and impurities

“…Different types of 4H-SiC based power devices had different requirements on the conduction type and doping concentration of epitaxial films [154,155]. Doping was a key technique to change the conduction type and carrier concentration of semiconductor materials.…”