The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Qin, Yuliang; Yan, Hengqing; Li, Fēi; Qiao, Liang; Liu, Qiming; He, Deyan

doi:10.1016/j.apsusc.2010.07.071

Cited by 15 publications

(5 citation statements)

References 28 publications

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“…Note that the deposition of Si film by ICP-CVD may result in a nanocrystalline structure even at a low temperature of 200 uC. 39 There are slopes nearly with the same gradient appearing between 0.3-0.7 V on the charge curves, which corresponds to the behavior of de-alloy of Li x Si phase. 3 From the second cycle onward, lithium insertion occurs at an earlier stage of y500 mV, in very good agreement with CV curves.…”

Section: Resultsmentioning

confidence: 94%

Synthesis of core–shell architectures of silicon coated on controllable grown Ni-silicide nanostructures and their lithium-ion battery application

Yue

Wang

et al. 2013

CrystEngComm

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Crystalline Ni 3 Si 2 nanostructures were grown on nickel foams via a simple and high-yield chemical vapor deposition (CVD). The morphologies were found to be dependent on the growth pressure. The obtained nanostructures have good crystallinity and uniform distribution. After coating amorphous silicon (a-Si) layers onto the obtained Ni 3 Si 2 nanostructures by an inductively coupled plasma CVD, the architectures were assembled as anodes for lithium-ion batteries. High initial reversible specific capacity of 3733 mA h g 21 is obtained for the prepared a-Si coated Ni 3 Si 2 nanowire electrode at a current density of 2.1 A g 21 .After 50 cycles, the specific capacity still stays at above 2000 mA h g 21 . When the current density is as high as 8.4 A g 21 , the specific capacity maintains at about 1500 mA h g 21 . For such core-shell configuration electrodes, the inactive and metallic Ni 3 Si 2 core conducts electrons and provides a mechanically stable anchoring basis for the a-Si layers, resulting in improved electrochemical performance.

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Section: Resultsmentioning

confidence: 94%

Synthesis of core–shell architectures of silicon coated on controllable grown Ni-silicide nanostructures and their lithium-ion battery application

Yue

Wang

et al. 2013

CrystEngComm

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“…Figure 5 shows the FTIR spectra of phosphorus doped nc-Si:H films prepared at various PH3 flow rates. For all films, the FTIR spectra shows two major absorption bands, which are mono-hydride (Si-H) wagging mode at  621 cm-1 [40,41] and di-hydride or poly-hydride complexes such as (Si-H2)n stretching/bending mode at  885 cm -1 . [42] It is observed from the figure that the depth of the bands located at  621 cm -1 and 885 cm -1 increases with increase in PH3 flow rate.…”

Section: 3: Raman Spectroscopy Analysismentioning

confidence: 98%

Effect of Phosphine Gas Conditions on Structural, Optical and Electrical Properties of Nc-Si:H Films Deposited by Cat-CVD Method

Gabhale¹,

Borate²,

Pandharkar³

et al. 2020

ES Mater. Manuf.

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Herein, n-type hydrogenated nano-crystalline silicon (nc-Si:H) thin films were synthesized using silane (SiH4) and phosphine (PH3) acted as a dopant gas by catalytic chemical vapor deposition technique (Cat-CVD). The substrate temperature was maintained at 200 0 C. The effect of PH3 flow rate on opto-electronic and structural properties of nc-Si:H has been studied using UV-Visible spectroscopy, dark conductivity, low angle XRD, Raman spectroscopy etc. From low angle XRD and Raman it was observed that incorporation of phosphorus atoms in nc-Si:H causes transformation nc-Si:H to a-Si:H. At optimized PH3 flow rate (0.3 sccm), n-type nc-Si:H films have high deposition rate (~ 29.6 Å/s) with optimum band gap (~ 1.89 eV), high dark conductivity (~ 1.52 S/cm) and low charge carrier activation energy (0.19 eV) at low hydrogen content (~ 1.83 at. %). The deposited films can be useful as n-layer Si:H based c-Si hetero-junction solar cells.

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“…where Q (in standard liters per minute or SLM) is the mass flow rate from the mass flow controller, p (Torr) is the pressure at any position within the flow path, and d (m) and W (m) represent the height and width of the rectangular flow path, respectively. Equation (1) indicates that the gas flow velocity increases with decreasing d.…”

Section: Concept Of the Slit-type Plasma Sourcementioning

confidence: 99%

“…Monosilane (SiH 4 ) and higher-order silane gases are becoming essential silicon source materials for use in the electronics industry, which requires high-quality Si films, including polycrystalline Si, amorphous Si and low-temperature epitaxial Si layers [1][2][3][4]. However, all silane gases are highly toxic and have low self-ignition temperatures, and are thus sold as compressed gases in cylinders.…”

Section: Introductionmentioning

confidence: 99%

On-site SiH₄ generator using hydrogen plasma generated in slit-type narrow gap

Takei¹,

Shinoda²,

Kakiuchi³

et al. 2018

J. Phys. D: Appl. Phys.

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We have been developing an on-site silane (SiH4) generator based on use of the chemical etching reaction between solid silicon (Si) and the high-density H atoms that are generated in high-pressure H2 plasma. In this study, we have developed a slit-type plasma source for high-efficiency SiH4 generation. High-density H2 plasma was generated in a narrow slit-type discharge gap using a 2.45 GHz microwave power supply. The plasma’s optical emission intensity distribution along the slit was measured and the resulting distribution was reflected by both the electric power distribution and the hydrogen gas flow. Because the Si etching rate strongly affects the SiH4 generation rate, the Si etching behavior was investigated with respect to variations in the experimental parameters. The weight etch rate increased monotonically with increasing input microwave power. However, the weight etch rate decreased with increasing H2 pressure and an increasing plasma gap. This reduction in the etch rate appears to be related to shrinkage of the plasma generation area because increased input power is required to maintain a constant plasma area with increasing H2 pressure and the increasing plasma gap. Additionally, the weight etch rate also increases with increasing H2 flow rate. The SiH4 generation rate of the slit-type plasma source was also evaluated using gas-phase Fourier transform infrared absorption spectroscopy and the material utilization efficiencies of both Si and the H2 gas for SiH4 gas formation were discussed. The main etch product was determined to be SiH4 and the developed plasma source achieved a SiH4 generation rate of 10 sccm (standard cubic centimeters per minute) at an input power of 900 W. In addition, the Si utilization efficiency exceeded 60%.

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The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Cited by 15 publications

References 28 publications

Synthesis of core–shell architectures of silicon coated on controllable grown Ni-silicide nanostructures and their lithium-ion battery application

Synthesis of core–shell architectures of silicon coated on controllable grown Ni-silicide nanostructures and their lithium-ion battery application

Effect of Phosphine Gas Conditions on Structural, Optical and Electrical Properties of Nc-Si:H Films Deposited by Cat-CVD Method

On-site SiH₄ generator using hydrogen plasma generated in slit-type narrow gap

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The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Cited by 15 publications

References 28 publications

Synthesis of core–shell architectures of silicon coated on controllable grown Ni-silicide nanostructures and their lithium-ion battery application

Synthesis of core–shell architectures of silicon coated on controllable grown Ni-silicide nanostructures and their lithium-ion battery application

Effect of Phosphine Gas Conditions on Structural, Optical and Electrical Properties of Nc-Si:H Films Deposited by Cat-CVD Method

On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap

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On-site SiH₄ generator using hydrogen plasma generated in slit-type narrow gap