2000
DOI: 10.1016/s0304-3991(99)00168-0
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The orientation-dependent simulation of ELNES

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Cited by 75 publications
(45 citation statements)
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“…a single atom. Moreover the matrix element will be dependent on the crystal orientation via the momentum transfer q [3]. If we assume however that both M (E) are approximately the same for materials with weak anisotropy we can write M cryst (E) ≈ M free (E).…”
Section: Introductionmentioning
confidence: 99%
“…a single atom. Moreover the matrix element will be dependent on the crystal orientation via the momentum transfer q [3]. If we assume however that both M (E) are approximately the same for materials with weak anisotropy we can write M cryst (E) ≈ M free (E).…”
Section: Introductionmentioning
confidence: 99%
“…Orientation-dependent Energy Loss Near Edge Structure (ELNES) is used for the study of the anisotropy of the electronic structure [1][2][3][4]. On the other hand, electronic anisotropy may cause errors in the investigation of phases by fingerprinting.…”
Section: Introductionmentioning
confidence: 99%
“…2. In the V 3d band the unoccupied t 2g * and e g * states are almost completely separated at 4.7 eV above the Fermi level [9]. The t 2g * states appear in the energy range between 1.8 and 4.7 eV and e g * states above that.…”
Section: Resultsmentioning
confidence: 73%
“…It is clear that just reducing the energy resolution from 1 to 0.6 eV is not sufficient to resolve the fine structure on V L 3 edges. The V L 3 ELNES calculated with the procedure described in [9] is added (lower curve).…”
Section: Experimental and Calculationsmentioning
confidence: 99%
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