The origin of 0.78 eV line of the dislocation related luminescence in silicon

Pivac, Branko

doi:10.1063/1.4754825

Cited by 4 publications

(2 citation statements)

References 15 publications

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“…2 shows the photoluminescence spectra of silicon wafers measured at 15 K. It can be seen that the asprepared sample with dislocations shows a quite broadened D1 line and D2 line, which is similar to the results in our previous paper. 26 The positions of these two lines are 0.812 eV and 0.875 eV, respectively, which also consist with the other work. 11,13,15 It is interesting to note there is some significant "background" information of D1 line around the maximum peak.…”

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confidence: 88%

“…2.The PL intensities of D1 line of the samples after different annealing steps on the dependence of temperature. The inset26 is the photoluminescence spectra of dislocated silicon samples measured at 15 K: (a) asirradiated sample and (b) the sample annealed at 1050 C for 12 h. The D1 line gets much sharper and the intensity of D2 line increases with the time of the high temperature annealing.…”

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Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

Xiang,

Li,

Jin

et al. 2013

Journal of Applied Physics

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In this paper, we have investigated the room temperature dislocation-related photoluminescence of electron irradiated silicon. It is found that high temperature annealing can enhance the D1 line emission measured at room temperature. The abnormal peak shift of D1 line on the dependence of temperatures reveals the reconstruction of D1 luminescence center. It is suggested that the high temperature annealing could cause the transformation of the dislocation-point defect structure, so that the D1 luminescence is enhanced and stabilized. V

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confidence: 88%

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confidence: 99%

Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

Xiang,

Li,

Jin

et al. 2013

Journal of Applied Physics

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Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Seigneur

Mohajeri

Brooker

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the first in a three-part series of manufacturing metrology for c-Si photovoltaic (PV) module reliability and durability. Here in Part 1 we focus on the three primary process steps for making silicon substrates for PV cells: (1) feedstock production; (2) ingot and brick production; and (3) wafer production. Each of these steps can affect the final reliability/durability of PV modules in the field with manufacturing metrology potentially playing a significant role. This article provides a comprehensive overview of historical and current processes in each of these three steps, followed by a discussion of associated reliability challenges and metrology strategies that can be employed for increased reliability and durability in resultant modules. Gaps in the current state of understanding in connective metrology data during processing to reliability/durability in the field are then identified along with suggested improvements that should be considered by the PV community.

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Room-Temperature Near-Infrared Electroluminescence from Boron-Diffused Silicon Pn-Junction Diodes

Gao

Fan

et al. 2015

Front. Mater.

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Silicon pn-junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL) was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at~1.6 µm (0.78 eV) was observed besides the band-to-band line (~1.1 eV) under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce that the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of the boron atoms into a silicon crystal lattice.

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The origin of 0.78 eV line of the dislocation related luminescence in silicon

Cited by 4 publications

References 15 publications

Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Room-Temperature Near-Infrared Electroluminescence from Boron-Diffused Silicon Pn-Junction Diodes

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