The origin of conductivity in ion-irradiated diamond-like carbon – Phase transformation and atomic ordering

Philipp, P.; Bischoff, L.; Treske, Uwe; Schmidt, Bernd; Fiedler, J.; Hübner, René; Klein, Frederik; Koitzsch, A.; Mühl, Thomas

doi:10.1016/j.carbon.2014.09.012

Cited by 39 publications

(7 citation statements)

References 49 publications

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“…The PF-TUNA, CITS, and local I–V measurements clearly illustrate that electron emission from Ag-ion implanted/post-annealed UNCD surfaces originate preferentially from the grain boundaries and not from the diamond grains or other topographical features in the materials. These experimental results of grain boundary EFE behavior also support the findings of other groups 47 – 51 . As long as the grain boundaries remain comparatively more conductive than the bulk grains, electrons can travel from the electoral contact at the reverse side of the Si substrate into the base of the film through the grain boundaries up to the top surface of the materials and are then easily field emitted to the vacuum.…”

Section: Resultssupporting

confidence: 90%

Nanoscale investigation of enhanced electron field emission for silver ion implanted/post-annealed ultrananocrystalline diamond films

Panda

Hyeok

Park

et al. 2017

Sci Rep

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Silver (Ag) ions are implanted in ultrananocrystalline diamond (UNCD) films to enhance the electron field emission (EFE) properties, resulting in low turn-on field of 8.5 V/μm with high EFE current density of 6.2 mA/cm2 (at an applied field of 20.5 V/μm). Detailed nanoscale investigation by atomic force microscopy based peak force-controlled tunneling atomic force microscopy (PF-TUNA) and ultra-high vacuum scanning tunneling microscopy (STM) based current imaging tunneling spectroscopy (CITS) reveal that the UNCD grain boundaries are the preferred electron emission sites. The two scanning probe microscopic results supplement each other well. However, the PF-TUNA measurement is found to be better for explaining the local electron emission behavior than the STM-based CITS technique. The formation of Ag nanoparticles induced abundant sp2 nanographitic phases along the grain boundaries facilitate the easy transport of electrons and is believed to be a prime factor in enhancing the conductivity/EFE properties of UNCD films. The nanoscale understanding on the origin of electron emission sites in Ag-ion implanted/annealed UNCD films using the scanning probe microscopic techniques will certainly help in developing high-brightness electron sources for flat-panel displays applications.

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Section: Resultssupporting

confidence: 90%

Nanoscale investigation of enhanced electron field emission for silver ion implanted/post-annealed ultrananocrystalline diamond films

Panda

Hyeok

Park

et al. 2017

Sci Rep

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“…This work has provided direct evidence that electron field emission from diamond surfaces originate preferentially from the diamond grain boundaries in doped-UNCD surfaces and not from the diamond grains or other topographical features. This is consistent with the model for electron field emission based on lowering of the emission threshold due to a reduction of the electron affinity of the diamond surface surrounding graphitic structures on the surface [47] and corroborates the findings of other groups [29,30,49,50,51]. As long as the grain boundaries remain relatively conducting compared to the bulk grains, electrons can travel from the contact at the reverse side of the Si substrate into the base of the film, then up to the grain boundaries and be emitted from the surface.…”

Section: Discussionsupporting

confidence: 92%

Straight imaging and mechanism behind grain boundary electron emission in Pt-doped ultrananocrystalline diamond films

Panda

Inami

Sugimoto

et al. 2017

Carbon

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A detailed scanning tunneling microscopic (STM) investigation is carried out to directly image and understand the mechanism behind enhanced conductivity and electron field emission (EFE) properties for platinum (Pt) ion doped/post-annealed ultrananocrystalline diamond (UNCD) films. Straight imaging of conducting/nonconducting sites is mapped by dynamic scanning tunneling microscopy (D-STM). Energy dissipation mapping and the local current-voltage measurements illustrate that grain boundaries are the conducting/emitting sites. Further, this fact is supported by the high resolution current imaging tunneling spectroscopy (CITS). The formation of abundant conducting sp 2 nanographitic phases along the diamond grain boundaries, confirmed from transmission electron microscopic examinations, is believed to be the genuine factor that helps for the easy transport of electrons and hence enhanced the conductivity/emission properties. The fabrication of these films with high conductivity and superior EFE properties is a direct and simple approach which opens up new prospects in flat panel displays and high brightness electron sources. Moreover, we expect the energy dissipation associated with assisted tunneling process of electrons from the tip of STM to sample surface, can be a very useful technique for imaging heterostructured semiconducting surfaces due to their electrical conductivity differences in nanometer scale, which can explain many physical and chemical properties.

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“…13(a), and that of a-C samples irradiated with Au + , Bi + , Ga + , Ge + , Si + , and Xe + ions [41,6] are plotted in Fig. 13(b).…”

Section: Modification Of A-c Samplesmentioning

confidence: 99%

A ternary phase diagram for amorphous carbon

Zhang

Wei

Lin

et al. 2015

Carbon

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The origin of conductivity in ion-irradiated diamond-like carbon – Phase transformation and atomic ordering

Cited by 39 publications

References 49 publications

Nanoscale investigation of enhanced electron field emission for silver ion implanted/post-annealed ultrananocrystalline diamond films

Nanoscale investigation of enhanced electron field emission for silver ion implanted/post-annealed ultrananocrystalline diamond films

Straight imaging and mechanism behind grain boundary electron emission in Pt-doped ultrananocrystalline diamond films

A ternary phase diagram for amorphous carbon

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