The origin of the inhomogeneity of electrical resistivity in magnetron-sputtered indium tin oxide thin films

Ichihara, Katsutaro; Inoue, N.; Okubo, Michiko; Yasuda, Nobuaki

doi:10.1016/0040-6090(94)90891-5

Cited by 42 publications

(12 citation statements)

References 5 publications

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“…It is clear that under either high T S or HPD conditions, there was no distinct location dependence of min on P O 2 ͓Figs. This conclusion is also consistent with the experimental results of indium tin oxide ͑ITO͒ films by Ichihara et al 24 Therefore, it revealed that although nonuniform active oxygen could not be the main reason, it play a secondary role under the conditions of low T S and low plasma density. It suggested that the resistivity was not significantly sensitive to the active oxygen distribution, thus the active oxygen mechanism was minor under these conditions.…”

Section: B Effects Of Deposition Parameters On the Resistivity Distrsupporting

confidence: 92%

Investigation on the electrical properties and inhomogeneous distribution of ZnO:Al thin films prepared by dc magnetron sputtering at low deposition temperature

Zhang

Pei

Gong

et al. 2007

Journal of Applied Physics

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Articles you may be interested inOptimizing the discharge voltage in magnetron sputter deposition of high quality Al-doped ZnO thin films Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnetron reactive sputtering A study of the electrical properties and spatial distribution of the ZnO:Al ͑AZO͒ thin films prepared by dc magnetron sputtering at low deposition temperature was presented, with emphasis on the origin of the resistivity inhomogeneity across the substrate. Various growth conditions were obtained by manipulating the growth temperature T S , total pressure P T , and ion-to-neutral ratio J i / J n . The plasma characteristics such as radial ion density and floating/plasma potential distribution over the substrate were measured by Langmuir probe, while the flux and energy distribution of energetic species were estimated through Monte Carlo simulations. The crystalline, stress and electrical properties of the films were found to be strongly dependent on T S and J i / J n . Under the low J i / J n ͑Ͻ0.3͒ conditions, the T S exerted a remarkable influence on film quality. The films prepared at 90°C were highly compressed, exhibiting poor electrical properties and significant spatial distribution. High quality films with low stress and resistivity were produced at higher T S ͑200°C͒. Similarly, at lower T S ͑90°C͒, higher J i / J n ͑ϳ2͒ dramatically improved the film resistivity as well as its lateral distribution. Moreover, it indicated that the role of ion bombardment is dependent on the mechanism of dissipation of incident species. Ion bombardment is beneficial to the film growth if the energy of incident species E i is below the penetration threshold E pet ͑ϳ33 eV for ZnO͒; on the other hand, the energy subimplant mechanism would work, and the bombardment degrades the film quality when E i is over the E pet . The energetic bombardment of negative oxygen ions rather than the positives dominated the resistivity distribution of AZO films, while the nonuniform distribution of active oxygen played a secondary role which was otherwise more notable under conditions of lower T S and J i / J n .

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Section: B Effects Of Deposition Parameters On the Resistivity Distrsupporting

confidence: 92%

Investigation on the electrical properties and inhomogeneous distribution of ZnO:Al thin films prepared by dc magnetron sputtering at low deposition temperature

Zhang

Pei

Gong

et al. 2007

Journal of Applied Physics

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“…With this configuration, the resistivity increase at the location on the substrate surface that corresponds to the erosion area of the target in films prepared by dc-MSD was always higher than that in films prepared by rf-MSD or rf+dc-MSD [32]. The increase in resistivity is attributable to an enhancement in the amount and activity of oxygen that reaches the location on the substrate surface corresponding to the erosion area of the target, resulting from negatively ionized oxygen accelerated by the higher d.c. sputter voltage in dc-MSD than in rf-MSD or rf+dc-MSD [28,32,[34][35][36][37][38][39]. In the current work using moving substrates during the deposition, the amount of resistivity obtainable in the thin films exhibits an average value that is related to the resistivity distribution that results from depositions on the surface of fixed substrates.…”

Section: Influence Of Doped Impurity and Deposition Methods On Electrimentioning

confidence: 98%

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Minami

Miyata

Nomoto

2012

IOP Conf. Ser.: Mater. Sci. Eng.

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“…As described above, the decreased carrier concentration found at locations on the substrate corresponding to the erosioned area can be related to the enhancement of oxidation at such locations resulting from a nonuniform distribution of oxygen reaching the substrate [8,22,23]. In contrast, a uniform resistivity distribution could be obtained in ITO:Zn films prepared with Zn contents above about 15 at.%.…”

Section: Spatial Distributions Of Electrical Propertiesmentioning

confidence: 99%

Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering

et al. 2000

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The origin of the inhomogeneity of electrical resistivity in magnetron-sputtered indium tin oxide thin films

Cited by 42 publications

References 5 publications

Investigation on the electrical properties and inhomogeneous distribution of ZnO:Al thin films prepared by dc magnetron sputtering at low deposition temperature

Investigation on the electrical properties and inhomogeneous distribution of ZnO:Al thin films prepared by dc magnetron sputtering at low deposition temperature

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering

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