The origins of the pn junction

Riordan, Michael; Hoddeson, Lillian

doi:10.1109/6.591664

Cited by 63 publications

(28 citation statements)

References 2 publications

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“…Since the serendipitous discovery of the p–n junction almost 80 years ago, [ 1 ] it has become an indispensable component in the modern semiconductor industry, thus bridging the gap between electronics and optics. [ 2–5 ] Conventional p–n junctions are mostly based on bulk semiconductors, such as Si and Ge, by doping two different regions with III or V elements.…”

Section: Figurementioning

confidence: 99%

MoTe₂ p–n Homojunctions Defined by Ferroelectric Polarization

et al. 2020

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Doped p–n junctions are fundamental electrical components in modern electronics and optoelectronics. Due to the development of device miniaturization, the emergence of two‐dimensional (2D) materials may initiate the next technological leap toward the post‐Moore era owing to their unique structures and physical properties. The purpose of fabricating 2D p–n junctions has fueled many carrier‐type modulation methods, such as electrostatic doping, surface modification, and element intercalation. Here, by using the nonvolatile ferroelectric field polarized in the opposite direction, efficient carrier modulation in ambipolar molybdenum telluride (MoTe2) to form a p–n homojunction at the domain wall is demonstrated. The nonvolatile MoTe2 p–n junction can be converted to n–p, n–n, and p–p configurations by external gate voltage pulses. Both rectifier diodes exhibited excellent rectifying characteristics with a current on/off ratio of 5 × 105. As a photodetector/photovoltaic, the device presents responsivity of 5 A W−1, external quantum efficiency of 40%, specific detectivity of 3 × 1012 Jones, fast response time of 30 µs, and power conversion efficiency of 2.5% without any bias or gate voltages. The MoTe2 p–n junction presents an obvious short‐wavelength infrared photoresponse at room temperature, complementing the current infrared photodetectors with the inadequacies of complementary metal‐oxide‐semiconductor incompatibility and cryogenic operation temperature.

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Section: Figurementioning

confidence: 99%

MoTe₂ p–n Homojunctions Defined by Ferroelectric Polarization

et al. 2020

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“…Solar cell, as the building block of the PV technology, was invented by Russell Ohl in 1940 [5]. In the history of PV technology, like other technologies, some decisions and economic issues were as turning points.…”

Section: Photovoltaic Technologiesmentioning

confidence: 99%

Practical battery size optimization of a PV system by considering individual customer damage function

Mehrabankhomartash

Rayati

Sheikhi

et al. 2017

Renewable and Sustainable Energy Reviews

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“…The work of Russell Ohl and his discovery of the p-n junction and the photovoltaic effect about 73 years ago [4], [5] during the investigation of silicon rectifiers used in radar detectors, should also be given credit. Although accidental, the discovery of the p-n junction was one of the critical inventions for the further development of semiconductor electronics.…”

Section: Discussion and Commentsmentioning

confidence: 99%

“…It dates back to 19241925 and the work of Julius Edgar Lilienfeld [1 [3], as well as to the work of Russell Ohl and his invention of the p-n junction, in 1940 [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Celebrating 65th Anniversary of the Transistor

Arsov¹

2013

ELS

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Abstract-The paper is dedicated to the 65 th anniversary of the invention of the revolutionary electronic component that actually changed our way of life-the transistor. It recounts the key historical moments leading up to the invention of the first semiconductor active component in 1947. The meaning of the blend "transistor" is explained using the memorandum issued by Bell Telephone Laboratories. Certain problems appeared in the engineering phase of the transistor development and the new components obtained as a result of this research are reviewed. The impact of this invention on the development of power electronics is being emphasized. Finally, the possibility that the most important invention of the 20 th century has been conceived not once but twice is discussed.

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The origins of the pn junction

Cited by 63 publications

References 2 publications

MoTe₂ p–n Homojunctions Defined by Ferroelectric Polarization

MoTe₂ p–n Homojunctions Defined by Ferroelectric Polarization

Practical battery size optimization of a PV system by considering individual customer damage function

Celebrating 65th Anniversary of the Transistor

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The origins of the pn junction

Cited by 63 publications

References 2 publications

MoTe2 p–n Homojunctions Defined by Ferroelectric Polarization

MoTe2 p–n Homojunctions Defined by Ferroelectric Polarization

Practical battery size optimization of a PV system by considering individual customer damage function

Celebrating 65th Anniversary of the Transistor

Contact Info

Product

Resources

About

MoTe₂ p–n Homojunctions Defined by Ferroelectric Polarization

MoTe₂ p–n Homojunctions Defined by Ferroelectric Polarization