The Orthorhombic FeIn Complex in Silicon

Tidlund, Per; Kleverman, Mats

doi:10.4028/www.scientific.net/msf.258-263.455

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2007

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“…The fitting of ␤ − channeling patterns 7 following the implantation of the radioactive isotope 59 Fe implies that Fe becomes substitutional following high-temperature ͑above 800°C͒ anneals. At lower temperatures, Fe is near T site, where "near" means 0.3-0.8 Å.…”

Section: Introductionmentioning

confidence: 99%

Interstitial Fe in Si and its interactions with hydrogen and shallow dopants

2007

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The properties of interstitial iron in crystalline silicon and its interactions with hydrogen, shallow acceptors ͑B, Al, Ga, In, and Tl͒, and shallow donors ͑P and As͒ are calculated from first-principles in periodic supercells. The interactions between the ͕Fe,B͖ pair and interstitial hydrogen are also examined. The configurations, electronic structures, and binding energies are predicted. The relative stability of the trigonal and orthorhombic structures of the Fe-acceptor pairs are calculated as a function of charge state and temperature. The gap levels are estimated using the marker method. The vibrational spectra of the complexes containing light impurities ͑H or B͒ are predicted.

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Section: Introductionmentioning

confidence: 99%