Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors J. Appl. Phys. 115, 084506 (2014); 10.1063/1.4866872 Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO 2 ± x Disparate product distributions observed in Mo ( 3 − x ) W x O y − ( x = 0 -3 ; y = 3 -9 ) reactions with D 2 O and CO 2 Structures of Mo x W ( 3 − x ) O 6 ( x = 0 -3 ) anion and neutral clusters determined by anion photoelectron spectroscopy and density functional theory calculationsThe realization of spin polarized tunnel devices made with CrO 2 , a theorized half-metallic ferromagnet, requires stringent control of surface and interface quality ideally obtainable via molecular beam epitaxy ͑MBE͒ growth. We have studied the MBE growth of all the di-and tri-oxides of the group VIB transition metals ͑Cr, Mo, and W͒, with the aid of a high flux atomic oxygen source and detection scheme, to help understand which oxidation states are reachable. We find that even though we can reach the ϩ6 oxidation state of Cr (CrO 3 ) we are unable to obtain single phase CrO 2 , the ϩ4 oxidation state. One interpretation of our results is that the physical effect of pressure, not solely the oxidation potential, is important to the growth of single phase CrO 2 .