The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10[sup −3] to 5 × 10[sup −1] Torr Oxygen Pressure

Abstract

A kinetic study was made of the oxidation of high-purity silicon carbide using a dynamic-type reaction system. Two types of oxidation behavior were found. Passive oxidation occurred for conditions where silica films were formed on the surface. Active oxidation occurred for conditions where volatile silicon monoxide was formed. The transition conditions between the two types of oxidation were studied as a function of oxygen pressure and temperature. The transition temperatures and pressures were related to thermochemical conditions for the reaction of silicon carbide with silica to form silicon monoxide and carbon monoxide.

The effect of surface oxidized modification on the mechanical properties of SiC3D/Al

“…Compared with Gulbransen's research [17], only the reaction shown in Equation (2) occurred in this study. The oxygen molecule was the diffusion unit [18].…”

“…For the critical pore, the relationship between the two abovementioned factors is the key to describing Q in and Q m . When the temperature is 1200 • C, the mean free path of the oxygen molecule, as calculated by Equation (17) [27], is 3.2307e −6 m.…”

Early-stage oxidation behavior at high temperatures of SiSiC cellular architectures in a porous burner

“…Two main oxidation modes have been observed in presence of oxygen, depending on its partial pressure, temperature and mass flow velocity. At very high temperatures and low oxygen partial pressure, or very high velocities (over 100 m/s), the so-called active oxidation is dominant and the material is gradually consumed by the following reactions [8][9][10]:…”

Effects of surface-oxidation modification and heat treatment on silicon carbide 3D/AlCu 5 MgTi composites during vacuum-pressure infiltration

“…(3) [20] and (4) [21] is SiO 2 layer. The relationship between the SiO 2 layer thickness and oxidation time satisfies the asymptote rule [22].…”