The Oxidation of Sputtered Tantalum Films

Basseches, H.

doi:10.1149/1.2425450

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…This explains the high value of the resistance. Thin films when heated in air can also undergo an increase in resistance because of oxidation [88].…”

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confidence: 99%

The electrical and structural properties of thin films of polymers deposited from the vapour phase, with special reference to polypropylene

Hogarth

Iqbal

1981

Phys. Stat. Sol. (a)

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“…This explains the high value of the resistance. Thin films when heated in air can also undergo an increase in resistance because of oxidation [88].…”

mentioning

confidence: 99%

The electrical and structural properties of thin films of polymers deposited from the vapour phase, with special reference to polypropylene

Hogarth

Iqbal

1981

Phys. Stat. Sol. (a)

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“…In previous studies, the oxidation reaction has been reported as linear (10,13), parabolic (7), cubic (17), and logarithmic (9,11,12) for comparable temperatures but generally higher pressures and longer times than considered here. The higher pressures and longer reaction times would tend to mask the linear behavior observed in this study.…”

Section: Discussionmentioning

confidence: 61%

The Gettering Properties of Tantalum

Zubler

1963

J. Electrochem. Soc.

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The reaction of tantalum with the gases, 02, N2, CO2, CO, and H2 at low pressures (0-200#) was studied in the range 200~176 Measurable reaction rates which were independent of pressure were observed for 02 at 350~176 N2 at 780~176 CO2 at 500~176 and CO at 950~176 H2 was reversibly absorbed at 200~176 and was the only gas released after sorption below 1600~As part of a general investigation of getters, a study has been made of the kinetics of reactions between tantalum and various gases. Tantalum and other bulk getters have been used in lamps and electron devices to remove detrimental gaseous impurities such as H2, 02, CO2, CO, H20, and hydrocarbons. In order to use these getters effectively, a knowledge of sorption and desorption processes as a function of temperature and-pressure is necessary.While a comprehensive survey of gas sorption by metals (1) and recent bibliographies (2, 3) on getters are available, studies of the reactions between tantalum and the gases of interest (4-13, 17, 18) do not cover the low gas pressure (micron) region adequately. Consequently, this investigation of the gettering properties of tantalum as a function of temperature (200~176 and pressure (0-200~) was initiated. ExperimentalThe tantalum was obtained from Fansteel Metallurgical Corporation in 0.003 x 5/16 in. strips and was specified as 99.9+% purity with C and Fe each at a maximum level of 0.03%. The tantalum was To Mass Spectrometer 3" Dosing Stopcock 4rnm Sore j Ta Ring t" Oia. -.003 W-Re Thermocouple ~010 W-Re Thermocoup|e --.010 Mo Wire .050 Ni Wire /Ni Heat Shield j~ To Potentiometer Fig. 1. Getter chamber formed into a 1.0 in. diameter ring with an approximate weight of 0.80g. The surface of the tantalum was smooth, and the surface area was calculated from the geometric dimensions.The gases with 99.5-99.99% purity were obtained in small cylinders or glass flasks, and further purification was not attempted except when possible the gas was passed slowly through a liquid nitrogen trap packed with glass beads to remove any possible water vapor.A glass, high vacuum system using a mercury diffusion pump was constructed. The gas pressure for the gettering experiments was measured by a Consolidated Electrodynamics Corporation, Model 23-105, micromanometer. An ion resonance mass spectrometer was used to analyze the gas in the getter chamber.A diagram of the getter chamber which is similar to one used by other investigators (14) is shown in Fig. 1. The tantalum ring was heated by a radiofrequency induction unit while the temperature was measured by the rhenium-tungsten thermocouple for which a calibration curve to 2100~ was available (15). Tungsten electrodes were used for all spot welding operations. A nickel heat shield was located between the hot and cold junctions of the thermocouple. The bottom section of the getter chamber was immersed in a water bath at room temperature which was taken as the cold junction temperature.After the getter chamber was sealed to the glass vacuum system and pumped down, the volume of the chamber...

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High temperature metallographic microscope studies of the initial oxidation of tantalum

Krudtaa¹

1963

Journal of the Less Common Metals

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The Oxidation of Sputtered Tantalum Films

Cited by 7 publications

References 5 publications

The electrical and structural properties of thin films of polymers deposited from the vapour phase, with special reference to polypropylene

The electrical and structural properties of thin films of polymers deposited from the vapour phase, with special reference to polypropylene

The Gettering Properties of Tantalum

High temperature metallographic microscope studies of the initial oxidation of tantalum

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