“…Among these silicides, the compound of Ti 5 Si 3 has been considered as a promising material for high-temperature structural applications, in view of its high melting temperature (2130 • C), low density (4.32 g/cm 3 ), good strength at elevated temperatures, excellent creep resistance, and high oxidation resistance [1][2][3]. In addition, titanium disilicide (TiSi 2 ) is a popular candidate used for the Si interconnects in the electronic industry because of its low electrical resistivity and high thermal stability [4].…”