The oxidation of zinc and barium chlorides with oxygen to obtain chlorine and finely dispersed zinc oxide

Chekryshkin, Yu. S.; Chudinov, A. N.; Rozdyalovskaya, T. A.; Федоров, А. А.

doi:10.1134/s1070427210080264

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…This is caused by the small amounts of ZnCl 2 , which did not become zinc hydroxyl chloride, but decomposed continuously because it was not completely removed at a higher temperature. 20,27,28) Therefore, we could posit that chlorine remains in the IZO gel at 450 C in different forms, such as a metal chloride and an anion.…”

Section: Resultsmentioning

confidence: 99%

Effect of Chloride Precursors on the Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors

Lee

Park

Yang

et al. 2013

Jpn. J. Appl. Phys.

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In this experiment, solution-processed indium zinc oxide (IZO) films were prepared by spin-coating the films as an active layer in thin-film transistors (TFTs). These films were coated with nitrate and a mixture of acetate- and chloride-based precursors to allow the IZO films to contain indium and zinc components. The solution-processed IZO-based TFT fabricated using a zinc acetate precursor for the IZO films exhibited a mobility of 2.83 cm2 V-1 s-1, an on/off current ratio of ∼1×105, and a subthreshold swing value of 2.48 V/dec. The IZO-TFT with the zinc chloride precursor exhibited a mobility of 4.37 cm2 V-1 s-1, an on/off current ratio of ∼1×103, and a subthreshold swing value of 6.44 V/dec. In comparison, the IZO-TFT with a mixture of zinc acetate and chloride precursors exhibited a mobility of 1.45 cm2 V-1 s-1, an on/off current ratio of ∼1×105, and a subthreshold swing value of 1.83 V/dec. The first two devices suffered from a large threshold voltage (V th) shift, >7 and >6 V, respectively, after a gate voltage of 20 V was applied for 2 h. In contrast, the device fabricated using the mixed precursors showed a higher stability, shifting about 1.7 V under the same stress conditions.

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Section: Resultsmentioning

confidence: 99%