The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn
                    <sub>3</sub>
                    N
                    <sub>2</sub>
                    precursors

Li, Bingsheng; Xiao, Zhiyan; Ma, Jiangang; Liu, Yichun

doi:10.1088/1674-1056/26/11/117101

Cited by 10 publications

(9 citation statements)

References 150 publications

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“…All measured samples show optical band-gap energies between 1.05 and 1.37 eV, being in agreement with most of the previous literature. 10,15,[25][26][27][28][29][30][31][32][33][34][35][36][37][38] Burstein and Moss 43,44 described the influence of the carrier concentration in semiconductors on their optical band-gap. The displacement of the Fermi level into a parabolic conduction band leads to a band-gap shift according to (8) where denotes the electron concentration.…”

Section: E Optical Properties Of Zn 3 Nmentioning

confidence: 99%

“…In the 2000s, the II-nitride material Zn 3 N 2 got into the focus of research, because of the strong interest to fabricate p-type doped ZnO, which would have led to a breakthrough in ZnO-based optoelectronic devices. In this context, several attempts were made to achieve p-ZnO by (partial) oxidation of Zn 3 N 2 [4][5][6][7][8][9][10][11][12] or by fabricating ZnO:N from Zn 3 N 2 targets, as demonstrated by pulsed laser ablation. 13 This also led to increased research activity on Zn 3 N 2 itself, including first demonstrations of Zn 3 N 2 in the field of thin film transistors (TFTs).…”

Section: Introductionmentioning

confidence: 99%

“…[14][15][16][17][18][19][20][21][22] Although some band-gap studies on Zn 3 N 2 estimated values of 2.9-3.4 eV, 14,16,23,24 most of the recent studies and theoretical calculations, including photoluminescence measurements, find values in the 0.8-1.5 eV range. 10,15,[25][26][27][28][29][30][31][32][33][34][35][36][37][38] The reason for this large discrepancy lies probably in the tendency of Zn 3 N 2 to oxidize in ambient conditions, 34,39 which could lead to a strong overestimation of the band-gap energy, as masked by the presence of ZnO (with a band-gap in the order of 3.3 eV 40 ). However, even in recent literature, the reported values display a large spread.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

John

Khalfioui

Deparis

et al. 2021

Journal of Applied Physics

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Single-crystalline Zn 3 N 2 thin films have been grown on MgO (100) and YSZ (100) substrates by plasma-assisted molecular beam epitaxy. Depending on the growth conditions the film orientation can be tuned from (100) to (111). For each orientation, x-ray diffraction and reflection high-energy electron diffraction are used to determine the epitaxial relationships and to quantify the structural quality. Using high temperature x-ray diffraction, the Zn 3 N 2 linear thermal expansion coefficient is measured with an average of (1.5 ± 0.1) • 10 -5 K -1 in the range of 300 to 700 K. The Zn 3 N 2 films are found to be systematically n-type and degenerate, with carrier concentrations of 10 19 to 10 21 cm -3 and electron mobilities ranging from 4 to 388 cm 2 V -1 s -1 . Low-temperature Hall effect measurements show that ionized impurity scattering is the main mechanism limiting the mobility. The large carrier densities lead to measured optical band-gaps in the 1.05 eV to 1.37 eV range due to Moss-Burstein band filling, with an extrapolated value of 0.99 eV for the actual band-gap energy.

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Section: E Optical Properties Of Zn 3 Nmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

John

Khalfioui

Deparis

et al. 2021

Journal of Applied Physics

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“…Due to the low solid solubility of N in ZnO, many researchers have obtained p-N:ZnO by thermal oxidizing Zn 3 N 2 , , which can incorporate a high concentration of N into ZnO. When Zn 3 N 2 is oxidized in an ordinary O 2 atmosphere, there are still a lot of oxygen vacancies in ZnO.…”

Section: Increasing the Acceptor Concentrationmentioning

confidence: 99%

ZnO with p-Type Doping: Recent Approaches and Applications

Yang,

Wang,

et al. 2023

ACS Appl. Electron. Mater.

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ZnO is a significant semiconductor material with the characteristics of direct band gap, large exciton binding energy, and easy growth of high-quality nanostructures, and it is widely used in various fields. However, obtaining high-quality p-type ZnO has become a significant obstacle to the wide application of ZnO. The research on p-ZnO started several decades ago and is regarded as the research focus. Many researchers have obtained high-quality p-ZnO by chemical vapor deposition (CVD) and physical vapor deposition (PVD). To obtain high-quality p-ZnO, researchers have used some “better” techniques to improve the crystal quality and mobility of p-ZnO, such as molecular beam epitaxy (MBE) and post-treatment. This review provides an overview of some methods for obtaining high-quality p-ZnO, such as increasing the acceptor concentration, shallowing acceptor energy levels, and reducing donor defects. In addition, we also review the applications of p-ZnO in LEDs, UV detectors, thin-film transistors, gas sensing, bionic materials, and other fields.

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“…The generation of the surface species can be explained by the mechanism below. ZnO is intrinsically an n-type semiconducting material, that when doped with nitrogen, is found to generate more p-type charge carriers [29,31,49]. The native defects in ZnO include both donor like and acceptor like defects.…”

Section: Electrochemical Mechanism For Ph Detectionmentioning

confidence: 99%

Electrochemical pH sensing characteristics of nitrogen‐doped zinc oxide nanostructures using a screen‐printed platform**

Mary Manoj,

Rose Viannie

2023

Electroanalysis

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Monitoring pH variations is of vital importance in the field of medical diagnostics and healthcare devices. Employing zinc oxide (ZnO) nanomaterials as active sensing elements allows sensitivity enhancement by increasing the surface area of the nanomaterials used and improving the charge transfer mechanism in the sensor. In this study, an electrochemical pH sensor based on nitrogen‐doped zinc oxide nanosheets was developed using a single step hydrothermal technique. The results obtained show the successful incorporation of nitrogen into the crystal structure of ZnO nanosheets. The sensing platform was fabricated using a simple mask‐printing technique using carbon electrodes on a polyimide substrate. The sensing characteristics of nitrogen‐doped ZnO (N−ZnO) nanosheets as pH sensors are evaluated for the first time. The results show that the response time and performance improved with nitrogen doping, for a lower analyte volume of just 5 mL. Furthermore, the detailed mechanism of pH sensing was formulated using electrochemical impedance spectroscopy (EIS). The resistance obtained was directly proportional to the charge‐transfer resistance at the electrode‐electrolyte interface for N−ZnO. The sensitivity as determined by charge‐transfer resistance is 0.512 MΩ/pH. Further, the chronoamperometric studies show a sensitivity of 0.156 μA/pH. The response characteristics also reveal a linearity of 0.965 over a pH range of 3 to 9. Hence, the study shows the exceptional response of N−ZnO nanostructures in pH sensing applications. The advantages of the N−ZnO nanosheets include higher sensitivity, flexibility, and a smaller volume of testing fluid that promotes their easy integration into various analytical applications.

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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

Cited by 10 publications

References 150 publications

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

ZnO with p-Type Doping: Recent Approaches and Applications

Electrochemical pH sensing characteristics of nitrogen‐doped zinc oxide nanostructures using a screen‐printed platform**

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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn 3 N 2 precursors

Cited by 10 publications

References 150 publications

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

ZnO with p-Type Doping: Recent Approaches and Applications

Electrochemical pH sensing characteristics of nitrogen‐doped zinc oxide nanostructures using a screen‐printed platform**

Contact Info

Product

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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors